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Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

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Page 1: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

Introduction toCMOS VLSI

Design

Lecture 5: Logical Effort

GRECO-CIn-UFPE

Harvey Mudd CollegeSpring 2004

Page 2: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 2

Outline Introduction Delay in a Logic Gate Multistage Logic Networks Choosing the Best Number of Stages Example Summary

Page 3: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 3

Introduction Chip designers face a bewildering array of choices

– What is the best circuit topology for a function?– How many stages of logic give least delay?– How wide should the transistors be?

Logical effort is a method to make these decisions– Uses a simple model of delay– Allows back-of-the-envelope calculations– Helps make rapid comparisons between alternatives– Emphasizes remarkable symmetries

? ? ?

Page 4: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design

Logic effort The method of Logical effort is a easy way to

estimate delay in a CMOS circuit.– We can select the fastest candidate by comparing

delay estimates of different logic structures.– The method can specify the proper number of

logic stages.– The method allows a early evaluation of the

design and provides a good starting point for further optimizations.

5: Logical Effort Slide 4

Page 5: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 5

Chip design flow

Page 6: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design

Technology dependency

Design levels

IBM

Technology dependence

Technology independency

Page 7: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design

Circuit design styles

5: Logical Effort Slide 7

Custom design Automatic design

Page 8: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 8

Custom design flow Additional human labor for better performance

- Designer has the flexibility to create cells at a transistor level

- Or choose from a library of predefined cells.- Which technology?

- Static CMOS- Transmission gate- Domino circuit- Any other logic family

- Which topology?- NAND, NOR, INV or complex gates

- Size transistors of the logic gates

Page 9: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 9

Automatic design flow This method uses synthesis tools to choose circuit

topologies and gate sizes.- Synthesis takes much less time than manually optimizing

paths and drawing schematics, but is generally restricted to a fixed library of static CMOS cell.

- In general this method produces slower circuits than designed by a skilled designer.

- Synthesized circuits are normally logically correct by construction, but timing verification is still necessary.

- Performance can be improved by setting directives for synthesis tool in order to solve critical paths delay.

Page 10: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design

layout process

IBM

Page 11: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design

Layout process

IBM

RC = Resistance CAP = CapacitanceSDF = Standard Delay File

LVSDRCAntenna

Simulate and tweak

Making changes in a circuit, throwing it into the simulator, looking at the result, making more changes, and repeating the process.

Page 12: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design

Delay estimate

5: Logical Effort Slide 12

The target her is design of fast chips.- Use a systematic approach to topology selection and gate

sizing;- A simple delay model that’s fast and easy to use.- The delay model should be accurate enough that if it

predicts circuit a is significantly faster than circuit b, then circuit a really is faster.

Delay model- Complexity of the gate;- the load capacitance;- parasitic capacitance.

Page 13: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design

Delay model

5: Logical Effort Slide 13

The delay model introduces a numeric “path effort” that allows the designer to compare two multistage topologies easily without sizing or simulation.

The model allows choosing the best number of stages of gates and for selecting each gate size in order to minimize delay.

Page 14: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design

Delay in a gate

5: Logical Effort Slide 14

The model describes delays caused by the capacitive load that the logic gate drives and by the topology of the logic gate.Clearly, as the load increases, the delay increases, but delay also depends on the logic function of the gate.

Slide 14

2 2

11

Inverters, the simplest logic gates, drive loads best and are often used as amplifiers to drive large capacitances.

Page 15: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 15

Logic gates that compute other functionsrequire more transistors, some of which are connected in series, making thempoorer than inverters at driving current.

Delay in logic gates

A NAND gate has more delay than a inverter withsimilar transistor sizes that drives the same load.

A 2-input NAND gate

Page 16: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design

To model the delay if a logic gate– Firstly, to isolate the effects of a particular

integrated circuit fabrication process by expressing all delays in terms of a basic “unit “ particular to that process.

is the delay of an inverter driving an identical inverter with no parasitics.

– Thus we express absolute delay as the product of a unitless delay of the gate d and the delay unit that characterizes a given process:

Slide 16

Delay in a Logic Gate

Page 17: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 17

Delay in a Logic Gate Express delays in process-independent unit

absdd

3RC

12 ps in 180 nm process

40 ps in 0.6 m process

Page 18: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 18

Delay in a Logic Gate Express delays in process-independent unit

Delay has two components

absdd

d f p

Page 19: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 19

Delay in a Logic Gate Express delays in process-independent unit

Delay has two components

Effort delay f = gh (proportional to the load on the gate’s output)– Again has two components– The effort delay depends on the load and on

properties of the logic gate driving the load.

absdd

d pf

Page 20: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 20

Delay in a Logic Gate Express delays in process-independent unit

Delay has two components

Effort delay f = gh (related to gate’s load)– Again has two components

g: logical effort (g is determined by gate’s structure)– g captures properties of the logic gate,– g 1 for inverter

absdd

d f p

Page 21: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 21

Delay in a Logic Gate Express delays in process-independent unit

Delay has two components

Effort delay f = gh (related to gate’s load)– Again has two components

h: electrical effort = Cout / Cin

– Ratio of output to input capacitance– Sometimes called fanout, h characterizes the load

absdd

d f p

fanout, in this context,depends on the load capacitance, not just the number of gates being driven.

Page 22: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 22

Delay in a Logic Gate Express delays in process-independent unit

Delay has two components

Parasitic delay p– Represents delay of gate driving no load– parasitic delays are given as multiples of the parasitic delay

of an inverter. – A typical value for pinv is 1.0 delay units. pinv is a strong

function of process-dependent diffusion capacitances.

absdd

d pf d = gh+p

Page 23: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design

Logical effort The delay formulation involves four parameters:

– The process parameter represents the speed of the basic transistors.

– The parasitic delay p expresses the intrinsic delay of the gate due to its own internal capacitance, which is largely independent of the size of the transistors in the logic gate.

– The electrical effort, h, combines the effects of external load, which establishes Cout , with the sizes of the transistors in the logic gate, which establish Cin.

– The logical effort g expresses the effects of circuit topology on the delay free of considerations of loading or transistor size.

Thus, we can observe that “logical effort” is useful because it depends only on circuit topology.

5: Logical Effort Slide 23

Page 24: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 24

Computing Logical Effort DEF: “logical effort is how much more input

capacitance a gate must present in order to deliver the same output current as an inverter.” (Sutherland)

Measure from delay vs. fanout plots Or estimate by counting transistor widths

A YA

B

YA

BY

1

2

1 1

2 2

2

2

4

4

Cin = 3g = 3/3

Cin = 4g = 4/3

Cin = 5g = 5/3

an inverter has a logical effort of 1.

Gates NAND e NOR with relative transistor widths chosen for roughly equal output currents.

g = no.Cin/no.Cout

Page 25: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 25

Example: Inverter Estimate inverter delay (reference)

2 2

11

Page 26: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design4: DC and Transient Response Slide 26

Example: 2-input NAND Estimate 2-input NAND delay

Parallel capacitances Transistor A:2C+2C=4CTransistor B:2C+2C=4C

g = 4/3= port input capacitance invert ouput capacitance

Page 27: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 27

Delay Plotsd = f + p

= gh + p

Electrical Effort:h = C

out / C

in

Nor

mal

ized

Del

ay: d

Inverter2-inputNAND

g =p =d =

g =p =d =

0 1 2 3 4 5

0

1

2

3

4

5

6

Page 28: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 28

Delay Plotsd = f + p

= gh + p

Electrical Effort:h = C

out / C

in

Nor

mal

ized

Del

ay: d

Inverter2-inputNAND

g = 1p = 1d = h + 1

g = 4/3p = 2d = (4/3)h + 2

Effort Delay: f

Parasitic Delay: p

0 1 2 3 4 5

0

1

2

3

4

5

6

Page 29: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 29

Catalog of Gates

Gate type Number of inputs

1 2 3 4 n

Inverter 1

NAND 4/3 5/3 6/3 (n+2)/3

NOR 5/3 7/3 9/3 (2n+1)/3

Tristate / mux 2 2 2 2 2

XOR, XNOR 4, 4 6, 12, 6 8, 16, 16, 8

Logical effort of common gates

Page 30: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design30

Example – 8-input AND

Page 31: Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

CMOS VLSI Design5: Logical Effort Slide 31

Catalog of Gates

Gate type Number of inputs

1 2 3 4 n

Inverter 1

NAND 2 3 4 n

NOR 2 3 4 n

Tristate / mux 2 4 6 8 2n

XOR, XNOR 4 6 8

Parasitic delay of common gates

– In multiples of pinv (1)