icp h2/nf3 remote-plasma simulation

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Plasma Enhanced materials processing and

rarefied GAS dynamics Unified Simulation tools

PEGASUS


ICP

H2/NF3 Remote-plasma simulation

Modules ： PHM NMEM


Purpose

Usually remote-plasma equipment is used as plasma CVD equipment and dry etching equipment. The feature reduces the incidence ion bombardment and the influence of photonsto the substrate, and makes easy control of distribution of the activated species on the substrate compared with parallel plate type plasma equipment in thin-film generation and thin-film processing.


Outline of equipment Model of simulation

H2

NF3

Substrate

r

z

RF

ε= 3.8r

R.F.

Gas-ring

H2

NF3


400

Operating conditions

ICP coil Power ： 200 [W] Freq. : 13.56 [MHz]Total gas flow rates ： 300 [sccm] H2 : NF3 = 2:1 (=200 : 100)Pressure on the outlet : 10 [Pa]

Geometry

Temperature of walls and substrate : 　 313 [K]Gas temperature : 　 313 [K]

Unit [mm]100

60

100

603

5

180

60

400140


Species ( electron, ions, and neutrals )

Charged spec. ： 13Neutral spec. ： 13


Gas-phase reactions ( hydrogen )


Gas-phase reactions ( nitrogen,fluorine)


Surface reactions

H 0.97 H2 0.5 H2 1.0N 0.97 N2 0.5N2 1.0F 0.97 F2 0.5F2 1.0NxFy 1.0 I+ ( 正イオン ) 　　　　 0.0 I 1.0(H,H2,N,N2,F,F2,NF,NF2,NF3)H3

+ 0.0 H 1.0 H2 1.0

rr : Reflection coeff.1-r : Sticking coeff.a 、 b : Emitted coeff.

1-r

(1-r)*a (1-r)*b

Incident Spec. 　　　　　　　 Reflection coeff. 　　　 Emitted spec./coeff.


Computational results


Time history of electron temp. at each monitoring cell


Physical quantitiesby R.F. coil

Electron densityand temperature

InductiveE-field[V/cm]

Adsorbedpower

[W/cm3]

Electrontemperature

[eV]

Electrondensity[/m3]


H3+

F - NF2+

Ion density [/m3]

H+

Ion density [/m3]


N H

Neutral density [/m3]

NF2 F



Mixture gas

Pressure[Pa]

Velocity[m/s]

NF3 H2


icp h2/nf3 remote-plasma simulation

Technology