DIODE

HITACHI

February/2000Product Marketing Dept.Multi Purpose Semiconductor Business DivisionSemiconductor & Integrated Circuits, HITACHI Ltd.

Hitachi Diode Products

DIODE

HITACHI

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party′s rights, including intellectual property rights, in connection with use of the information contained in this document.2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3. Hitachi makes every attempt to ensure that its products are of high quality and reliability However, contact Hitachi′s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5. This product is not designed to be radiation resistant.6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7. Contact Hitachi′s sales office for any questions regarding this document or Hitachi semiconductor products.

DIODE

HITACHI

1. General Purpose Diodes

2. High-Frequency Diodes

Contents

DIODE

HITACHI

1. General Purpose Diodes

DIODE

HITACHI

Schottky-barrier diodes Wide lineup of low VF and high efficiency for the secondary power supply circuit

Switching diodes Wide lineup for various uses requiring high-speed switching, high voltage, etc. Ultra small UFP (1608) package added to the lineup

Zener diodes Wide lineup covering the voltage range for various uses Plug-in and surface mounted packages Lineup of diodes for surge absorption (two and four chips)

Features of Hitachi Diodes

1-1

DIODE

HITACHI

Diode Lineup (1)

Maximum ratings Characteristics

Application Package code Type No. VRM(V)

IO(A)

VF (V)(max)

IR (mA)(max)IF(A) VR(V)

HRW0202A 20 0.2 0.40 0.1 0.05 20

HRW0202B 20 0.2 0.40 0.1 0.05 20

Schottky-barrierdiode for rectifier MAPAK

HRW0203A 30 0.2 0.50 0.2 0.05 30

HRW0302A 20 0.3 0.40 0.3 0.1 20

HRW0502A 20 0.5 0.40 0.5 0.2 20

HRW0503A 30 0.5 0.55 0.5 0.05 30

HRW0702A 20 0.7* 0.43 0.7 0.2 20

HRW0703A 30 0.7* 0.50 0.7 0.1 30

* IF value

1-2

DIODE

HITACHI

HRU0103A 30 0.1 0.44 0.1 0.05 30

URP HRU0203A 30 0.2 0.50 0.2 0.05 30

HRU0302A 20 0.3 0.40 0.3 0.10 20

HRB0103A 30 0.1 0.44 0.1 0.05 30

CMPAK HRB0103B 30 0.1 0.44 0.1 0.05 30

HRB0502A 20 0.5 0.40 0.5 0.20 20

UFP HRC0103A 30 0.1 0.44 0.1 0.05 30

Diode Lineup (2)

1-3

Schottky-barrierdiode for rectifier

Maximum ratings Characteristics

Application Package code Type No. VRM(V)

IO(A)

VF (V)(max)

IR (mA)(max)IF(A) VR(V)

HRC0203A 30 0.2 0.52 0.2 0.01 30

DIODE

HITACHI

High-speed switching

Application Package code Main type No.Maximum ratings Characteristics

VF (V)(max) VRM (V) IO (A)

DO-35

MPAK

DO-41

1S2076A

HSM2836C/2838C

1SS82

1SS83

HSM83

HZU series

HZM-N series

HZS series

HZ series

HZ-L series

HZ-P series

60

80

200

250

250

0.15

1.0

MPAK

High-voltage switching DO-35

Voltage-compensationzener diode

General

High power

DO-35

MHD

MPAK

URP

0.1

0.8

1.0

1.2

0.2

0.2

0.1

HZU-LL series

1.2

HSU119/HSC119 80URP/UFP 0.1 1.2

Diode Lineup (3)

1-4

DIODE

HITACHI

Diode Lineup (4)

Application Package code Type No.Maximum ratings Characteristics

VRM (V) IO (A)

MPAKSystem protectionHSM126S

HSM107S

20

8 0.3

0.35

0.05

0.2

VF (V)(max)

1-5

DIODE

HITACHI

ESD (kV)

100

Fun

ctio

n ca

paci

ty (

pF)

10

1

10 15 20 25 30

HZM6.8FA

HZM6.2ZWA/FA

HZM6.8ZWA/FA

Extends lineup

: Corresponding products in N and R companies

Next development targetLow-leakageversion

'97/Shimo '98/Kami '98/Shimo '99/Kami '99/Shimo '00/Kami

Low capacity and high voltage

HZM6.2ZWA HZM6.8ZFA

Low capacity and high voltage process

PKG developmentsmaller with many pins UFP,CMPAK-5

Extension of lineup

Development of surge-protection-dedicated series HZU series, low-leakage version

Array with many chips

2-3pF x 20kV or more

Intensity of cost competition

VZ control lessDevelopment of numerous elements/chip structures

Low capacity and high voltage process

CMPAK-5 version

Development Map of Zener Diodes for the Protection of Electronic Circuits

1-6

DIODE

HITACHI

Lineup of Surge-Absorption Diodes (1)

Application Package code Type No.

Ratings Characteristics

Vz (V)Pd (mW)

200

25.1 to 28.9

Surgeabsorption

200

6.47 to 7.0

C(pF)(max)

ESD (kV)(min)

30

200 4.01 to 4.48 30

HZ6.2ZWA* 200 5.9 to 6.5

MPAK200 6.47 to 7.0 20

HZM6.8WA

HZM6.8ZWA*HZM27WA

HZM4.3FA

8.5

130

25(27)

150

13

30

MPAK-5

(27)

200 6.47 to 7.0 30

200 6.47 to 7.0 20

HZM6.8FA

HZM6.8ZMFA*

130

25

5.9 to 6.5200HZM6.2ZFA* 8.5 13

200

200

HZM7.5FA

HZM27FA

7.06 to 7.84

25.1 to 28.9

125 20

30

URP 200HZU6.2Z* 5.9 to 6.5 8.5

Remark

Two built-inchips

Four built-inchips

( ): Reference value

5.31 to 5.92200HZM5.6ZFA* 8.5 8

200HZU5.6Z* 5.31 to 5.92 8.5 8

200HZU6.8Z* 6.47 to 7.0 25 20

1-7

*Low Capacitance

DIODE

HITACHI

Application Package code Type No.

Ratings Characteristics

Vz (V)Pd (mW)

200

6.47 to 7.14Surgeabsorption

200

5.31 to 5.92

200 8.56 to 9.55

C (pF)(max)

ESD (kV)(min)

30

30

200 7.06 to 7.84 30

HZU5.1G 200

200

4.84 to 5.37

7.76 to 8.64

URP

200 5.86 to 6.53 30

200 9.45 to 10.55 30

HZU5.6G

HZU6.2G

HZU6.8G

HZU7.5G

HZU8.2G

HZU9.1G

HZU10G

30

30

30

Lineup of Surge-Absorption Diodes (2)

1-8

DIODE

HITACHI

CMPAK MPAK MPAK-5

35V70V (A) (B)

300V HSM83

General use 200mW HZM**NLow noise 150mW

Surge absorption200mW HZM**WA HZM**FA

Low capacity HZM**ZWA

URP

HSU119

HSU83HZU**HZU**LLHZU**G

UFP

HSC119

HZU6.2ZHZM**ZFA

HZM**FAHZM**ZFA

(A) HSB2838 HSB2836 HSB123HSB124S

(B) HSM2838C HSM2836C HSM123HSM124S HSM223C

HZM**WAHZM**ZWA

HSM83

HZM**N

Pin arrangement

Zener

Switching

Lineup of Surface-Mounted-Package Diodes

Pin connection

Zen

er

1-9

High-speedswitching

DIODE

HITACHI

Trend of Diode Packages

Countermeasures for high-density mounting

Long side (mm)

3.0

Sho

rt s

ide

(mm

)

2.0

1.0

5.0 4.0 3.0 2.0 1.0

LRP

SRP

URP

UFP

CMPAK

MPAK

LLD

1-10

DIODE

HITACHI

Application Package NEC Pd(mW) Toshiba Pd

(mW)Panasonic Rohm Hitachi Features of Hitachi products

Do-35 RD-E 500 05AZ 500 MA1000 500 HZ Standard DHD type

Do-34(MHD)

04AZ 400 MA4000 400 HZS Standard MHD typeGeneralpurpose

RD-ES 400 MTZ 500 HZS-N Compatible with RD-ES (NEC)

LLD RD-L 500* MA6000 500 RLZ 400 HZK LLD package of HZMPAK RD-M 200 02CZ 200 MA3000 200 HZM-N Three-terminal surface-mounted package

URP RD-S 200* 02DZ 200 MA8000 200 DTZ 200* HZU Two-terminal surface-mounted package

Do-35HZ-L

Noise of 1/3 to 1/10 that of HZHZ-LL

Low noise

Do-34(MHD)

RD-JS 400 04BZ 400 HZS-L Small package of HZ-LRD-HS 250 04DZ 250 HZS-LL Small package of HZ-LL

LLDRD-K 400 HZK-L LLD package of HZ-L

HZK-LL LLD package of HZ-LL

URP HZU-LL Two terminals, surface-mounted packageSurgeprotection

MPAK RD-MW 200 HZM-WA Two chips. Guaranteed against 30-kV surge voltage

MPAK4 HZM-FA Four chips Guaranteed against 30-kV surge voltage

Electricpower

Do-41 RD-F 1000 1AZ 1000 MA2000 1000 HZ-P Compatible with RD-F

Temperaturecompensation

Do-35 HZT

500

400

400

500

200*

200*

400

250400

250

400

250

150

200

200

800

400 7/33V is in lineup

* When mounted on the substrate

Wide lineup to support various applications

Note) See catalogues for details as the characteristics or package may be changed.

Appendix

Pd(mW)

Pd(mW)

Pd(mW)

Lineup of Hitachi's Zener Diodes

1-11

DIODE

HITACHI

2. High-Frequenc y Diodes

DIODE

HITACHI

Varicap Diodes High performance enabled by the development of a new process A process → B process is adopted Wide lineup of diodes for VHF/UHF tuners (standard band and wide band) and enrichment of UFP (1608) package products VCO and VCXO diodes that cover various frequency bands for telecommunication use are prepared

Schottky-Barrier Diodes Surface-mounted package lineup for balanced mixers and modulators (UFP, URP, MPAK, MOP, etc) Multi-diode chips (two diodes and four diodes) lineup

PIN diodes PIN-diode lineup suitable for small signal attenuator and antenna SW (surface-mounted package: UFP, URP, SRP, MPAK)

High-frequency Diode

2-1

DIODE

HITACHI

Diode Countermeasures for the Trend in Equipment

Field Application Equipment trend Diode countermeasures

Mob

ileco

mm

unic

atio

n

Cordless phonePagerCellularTransceiver

• Low-voltage drive Low power consumption• High frequency• Small size

Improved varicap diode characteristics (improved process) and multiple chips Expanded lineup of super ultra small package (1406)

TV/VCR tunerBS/CS tuner

• High performance• Small size• Adjustment-free tuner• Low tuning voltage

High capacity change ratio and low serial resistance Super ultra small package (1608) Reduces the characteristic dispersion in varicap diodes (through an improved process) Development of varicap diodes that cover VHF and UHF, respectively, at VT=10 V

Com

mon

Common• Small size• High reliability

Surface-mounted package and multiple chips Lineup of surge-protection devices

Tun

er

2-2

DIODE

HITACHI

Wafer process and high-frequency characteristics (TV/VCR tuners)

1997 1998 1999 2000

A-Process B-Process II

B-Process I

Rs(

Ω)

0.2

0.4

0.6

0.8

A-ProcessB-Process I

B-Process II0

10

20

30

Tun

ing

volta

ge (

V)

1997 1998 1999 2000

Varicap Diode (1)

2-3

DIODE

HITACHI

10 100

C1V(pF)

HVU17

HVC362HVC359

HVC355B

HVC350B

<A-Process>

<B-Process I>HVC376B

HVC375B

Cap

acity

cha

nge

ratio

(C

1V/C

3V)

HVC374B

HVC372B

1.0

2.0

3.0

4.0 <B-Process II>

Wafer process and high-frequency characteristics (VCO/VCXO)

2-4

Varicap Diode (2)

DIODE

HITACHI

Lineup

VCOVCXOTCXO

FunctionPackage code

UFP(1608)

URP(2125)

HVU355B

HVU17HVU350B

HVU359

HVC350B

HVC358BHVC359HVC362HVC365

HVC369B

HVC355B

HVC372B

HVC375BHVC376B

Tuning

HVU200AHVU316

HVU202A/202B

HVU306A/306BHVU300A/300B

HVU307

HVU363A/363B

HVC200AHVC202A/202BHVC300A/300BHVC306A/306B

HVC363A/363BHVU316

FunctionPackage code

UFP(1608)

URP(2125)

HVC317BHVC321B*

*Supports VT =10 V product: under development

HVC366

HVC374B

2-5

Varicap Diode (3)

HVC368B

DIODE

HITACHI

Cap

acita

nce

betw

een

pins

C (

pF)

Reverse voltage VR(V)

Voltage vs. capacitance (VCO/VCXO) Voltage vs. capacitance (VCO/VCXO)

0.1 1 100

10

20

30

40

50

60

HVU17

HVC362

HVU359 HVC359 HVC365

f=1MHz

Cap

acita

nce

betw

een

C (

pF)

Reverse voltage VR(V)

0.1 1 100

5

10

15

20

25

30f=1MHz

HVC369B

HVU355B HVC355B

HVC372B

HVU350B HVC350B

HVU351HVC351

HVC358B

2-6

Varicap Diode (4)

DIODE

HITACHI

Low noise (low NF)

High performanceHigh integration(Balanced mixer anddouble-balanced mixer)

Low conversion dissipation

Low capacitance between pins

Development of matched pairsand matched quads(Matched characteristics fortwo or four chips)

High forward current

Product trends (Small-signal diodes)

2-7

Schottky Diodes (1)

Market Needs Product Trends

DIODE

HITACHI

LineupMixer Detection switching

URPHSU88 10 15 0.8

HSM88AS 10 15 0.9

MPAK

HSM88ASR 10 15 0.9

HSM88WA 10 15 0.9

HSM88WK 10 15 0.9

MOP HSB88WS 10 15 0.9

Package Type No.Maximum ratings Characteristics

VR(V) IO(mA) C(pF)max

DO35 1SS106 10 30 1.5

1SS198 10 30 1.5MHD

MPAKHSM276S 3 30 0.9

HSM276SR 3 30 0.9URP HSU276 3 30 0.9

UFP HSC276 3 30 0.9

CMPAK4 HSB0104YP 40 100 20.0

Package Type No.Maximum ratings Characteristics

VR(V) IO(mA) C(pF)max

2-8

Schottky Diodes (2)

CMPAK HSB276S 3 30 0.9

UFP HSC88 10 15 0.9

DIODE

HITACHI

Results of characteristic evaluationof antenna-switching PIN diode

Dependence of TX-ANT insertiondissipation on forward current

Antenna switching circuit

Pin Di (1)

Pin

Di

(2)

RFC

ANT

TX RX

IF

λ/4

Zo=50 1/2

Features Low price Low dissipation High isolation Small package

Dependence of ANT-RX isolation on forward current

Isol

atio

n (d

B)

Forward current (IF(A))

0

10

20

30

40

50

60

70

10-5 10-4 10-3 10-2

f=900MHz

Inse

rtio

n di

ssip

atio

n(dB

)

Forward direction current IF (A)

0.1

1

10

10-4 10-3 10-2 10-1

f=900MHz

Two-signal third-order distortion intercept point

Out

put s

igna

l str

engt

h (d

Bm

)Input-signal electric power (dBm)

-60 -40 -20 0 20 40 60-60

-40

-20

0

20

40

60

Two-signal third-orderdistortion output

Basic wave

f=900MHz IF=10mA

IP=48dBm

2-9

PIN diode (1)

DIODE

HITACHI

Lineup

Type No. PackageHigh-frequency resistance (rf) Capacitance between pins (C)

Ω(max) Condition pF(max) ConditionHVC131 UFP 1.0 IF=10mA 0.8 VR=1V

HVC133 UFP 0.7 IF=2mA 1.0 VR=1V

HVU131 URP 1.0 IF=10mA 0.8 VR=1VHVU132 URP 2.0 IF=10mA 0.5 VR=1VHVU133 URP 0.7 IF=2mA 1.0 VR=1V

HVC132 UFP 2.0 IF=10mA 0.5 VR=1V

HVC134 UFP 2.0 IF=10mA 0.4 VR=1V

HVC136 2.0 IF=2mA 0.6 VR=1VUFP

2-10

PIN diode (2)

HVC135 UFP 0.9 IF=2mA 0.6 VR=1V

Pin Connection

DIODE

HITACHI

3.0

2.0

1.0

5.0 4.0 3.0 2.0 1.0

LRP

SRP

URP

UFP

CMPAK

MPAK

1006(Under development)

SFP(1406)

LLD

2-11

Trend of Diode Packages

Countermeasures for high-density mounting

Long side (mm)

Sho

rt s

ide

(mm

)

DIODE

HITACHI

Hitachi Diode Products

Publication Date: February, 2000Published by: Electronic Devices Sales & Marketing Grope Hitachi, Ltd.Edited by: Technical Documentation Grope Hitachi Kodaira Semiconductor Co., Ltd.

Copyright Hitachi, Ltd. 2000. All rights reserved. Printed in Japan

ADE-A08-005B(Z)