High Voltage Power MOSFET& IGBTsEster Spitale

500V

1000V

1500V

800V

600V

200V

Normalised R DS(on) x Area

1 0.8 0.7 0.5 0.35

MD

mesh II

MD

mesh V

0.20.3

Super-junction

SuperM

ES

HN

K

PlanarS

uperME

SH

3 K3

SuperM

ES

H5

K5

ST HV Power MOSFETs: WW most complete offer

ST x 42 N 65 M5

CHANNEL POLARITY

BREAKDOWNVOLTAGE ÷ 10(with the exception of non 10 multiples)

SPECIAL FEATURES

M5 = MDmesh V >200VK3 = SuperMESH3 >300VK5 = SuperMESH5 >900V up to 1500V

PACKAGE

INDICATIVE CURRENT RANGE

C = TSSOP8 T = SOT23-6L H = H2PAK (2 to 7 leads)R = PPAKZ = P2PAKY= Max247 E = ISOTOPQ = TO-92FW = TO-3PF N = SOT-223L = PowerFLATU = IPAKI = I2PAKS = SO-8D = DPAK B = D2PAK P = TO-220/PentawattF = TO-220FPW = TO-247

T = Temperature SensingC = Current SensingZ = Clamped by Zener Diode 33-150VD = Fast Recovery Diode

N = N- Channel P = P-ChannelNS or PS = N-Ch or P-Ch plus Schottky Diode(electrically connected, monolithic included) DNS or DPS = N-Ch or P-Ch plus Schottky Diode (not electrically connected)N…N = Two different N-Channel diceN…P = Complementary pairDN or DP = Dual N-Ch or Dual P-Ch

ST Power MOSFET’s: Nomenclature

Insert All the “TM”

TECHNOLOGY

3

HV MOSFETs: 500V700V

Abs. Max Ratings STD planar SuperMESH 3

VDSS 400V,450V,500V, 600V400V,450V,525V, 600V,620V,650V

Diode dv/dt, di/dt 4.5V/ns, 400A/µs Up to 12 V/ns,400A/µs

Vth 3V÷4.5V 3V÷4.5V

BodySource

D.E.PP

Substrate

• Lower switching losses

• Higher dv/dt

• Higher ESD immunity

• Higher margin & robustness

HIGHER VDSS

BtB G-S Zeners

ImprovedDYNAMIC(Qg Ciss,

Crss)

REDUCED Trr

SuperMESH3

Ciss Coss Crss

SuperMESH3 712 112 8

Other Planar(similar Rdson)

920 114 21

Device: STx6N62K3Conditions : Vds=25V ; f=1MHz ; Vgs=0V ; Tj=25°C

Features• Lower Gate Charge

Benefits

• Lower Switching losses• Lower gate driving losses

SuperMESH3 Vs equivalent planar device

Same RDS(on) planar techno

SuperMESH3

SuperMESH3 – Improved dynamic

RDS(on) State-of-the-art

Best cost/performancecompromise

Why use an ST HV Power MOSFETs!!

MD

mesh II

MD

mesh V

>50 different 600/650V

RDS(on) specs

>50 different 600/650V

RDS(on) specs

from 1.8Ωdown to 17mΩ

consolidated technologiesconsolidated technologies

300Mpcs sold during

2011

extremely fast time-to-

market

high power in innovative packaging

high power in innovative packaging

among leaders in

FReDMOSFETs

among leaders in

FReDMOSFETs

RDS(on) State-of-the-art

Best cost/performancecompromise

ST HV Power MOSFETs: WW most complete offer

MD

mesh II

MD

mesh V

Multiple Drain mesh Evolution

DIFFERENCES

Key features

650 V lowest RDS(on) x area Higher breakdown voltage MDmesh™ V targeted for best

efficiency in the application

Main benefits

Higher energy saving Increased power density Increased safety margin

Key features

Low RDS(on) up to 40% less vs MDmesh I Small Qg,Ciss,Coss,Crss Very robust in dv/dt

0.36Ohm in DPAK 600V BEST in ClassBEST in ClassBEST in ClassBEST in Class

Main benefits

Extremely Low Power Losses Higher current at lower Vgs Avalanche Ruggedness

- Ron * Area- Concentration drain n

- Pitch

BVDss R DS(on) (max) [Ω] Sales Type Package Status

600V

1.800 STx3NM60N PowerFLAT3.3x3.3 Samples

0.900 STx7NM60N

DPAK / IPAK TO-220

Full Production

0.700 STx9NM60N

0.550STx10NM60N

0.360STx13NM60N

0.285 STx18NM60N

D²PAK TO-247TO-220/FP

0.220 STx22NM60N

0.190 STx24NM60N

0.165 STx26NM60N

0.105 STx34NM60N

0.070 STW48NM60N

TO-2470.060 STW56NM60NSamples

0.049 STW62NM60N

700V 0.350 STx13NM70N TO-220/FP Samples

MDmeshII: Product range extension

MDmeshV – New MDmeshV devices with improved Rds(on)

ST able to beat his record for

29mΩ650V

Best Competition: 650V 37mΩ

63mΩ650V

Best Competition: 650V 74mΩ

220mΩ650V

Best Competition: 650V 250mΩ

new concept devices:

MDmesh V: NEW product range

Sales Type R DS(on) Package SamplesMass

Production

650V

STY139N65M5 0.017 Max247 available May 2012

STW88N65M5 0.029TO-247

available production

STW69N65M5 0.045 available production

STx57N65M5 0.063

TO-220D²PAKI²PAK

available May 2012

STx45N65M5 0.078 available production

STx38N65M5 0.095 available production

STx34N65M5 0.110 May 2012 June 2012

STx31N65M5 0.148 available May 2012

STx18N65M5 0.240TO-220 TO-247DPAKIPAK

available June 2012

STx15N65M5 0.340 May 2012 May 2012

STx11N65M5 0.480 available production

Very HV: 900V1700V

20122010 2011

Eng. samples Maturity

SuperMESH 5 (Extension up to 2200V)

SuperMESH 5

2013

850V to 1200V

SuperMESH3950V to 1200V

1500V to 2200V

VHV MOSFETs: SuperMESH Roadmaps 14

Main benefitsHigher energy saving

Faster switching speed

Increased safety margin

TO-3PF for higher creepage

SuperMESH 5: Very HV SJ revolutionKey features

900V-1200V lowest RDS(on) x area Lowest FOM (RDS(on)*Qg) Designed for best efficiency

TO-3PF PowerFLAT 8x8

STL23N85K5 850V 0.275Ω PowerFLAT8x8

STD6N95K5 950V 1.250Ω DPAK

STP20N95K5 950V 0.330Ω TO-220

STFW6N120 1200V 0.690Ω TO-3PF

SuperMESH 5: best in class

STP21N90K5 BestCompetitor

0,299

0,34

RDS(on) MAX (Ω)

STP21N90K5 BestCompetitor

12

32

FoM = RDS(on) •Qg (Ω•nC)

900V TO-220 Benchmark

Targets* by Package/Voltage

* Simulated data

Samples In development

SuperMESH 5: best in class

RDS(on) MAX(mΩ) 950V 1050V 1200V

ISOTOP 48 70 100

Max247 85 120 175

TO-247 150 215 320

TO-3PF 175 250 370

TO-220 330 460 690

DPAK 1250 1700 2600

Production

VDS [V] RDS(on) (max) [Ω] P/N Package Samples Production

800

1.2 STx7N80K5 DPAK/IPAK

Q2 2012 Q3 20120.950 STx8N80K5 TO-220/TO-220FP/TO-247

0.375 STx12N80K5 TO-220/TO-220FP/TO-247

0.260 STx25N80K5 TO-220/TO-220FP/TO-247

850 0.275 STL23N85K5 PowerFLAT 8x8 HV Available Q2 2012

900 0.299 STx21N90K5 TO-220/TO-220FP/TO-247

Available Production950

1.250 STx6N95K3DPAK/IPAK/TO-220/TO-220FP/ TO-247

0.850 STx13N95K3 TO-220/TO-220FP/TO-247

0.360 STW25N95K3 TO-247

0.330 STx20N95K5 TO-220/TO-220FP/TO-247

1050 11 STx1N105K3 DPAK/TO-220 End Q2 2012

12002.400 STx6N120K3 TO-220/TO-3PF/TO-247

Q2 2012 Q3 20120.690 STx12N120K5 TO-220/TO-3PF/TO-247

SuperMESH 3 & 5 very HV seriesVery first available specs:

19

Main Benefits

VHV MOSFETs for 3-ph aux. SMPS

Specifically targeted for 3- Ф aux. SMPS PV inverter Welding Industrial Drvies

High reliability makes each solution stronger Wide choice of packages, including new fully

isolated TO-3PF, for easier solution

VDS

[V]P/N

RDS(on) (max)

[Ω]Packages

1500

STW9N150 2.5 TO-247

STx4N150 7 TO-247/ TO-3PF/TO-220/H2PAK

STx3N150 9 TO-247/ TO-3PF/TO-220/H2PAK

1700 STx3N170* 13 TO-247/ TO-3PF/TO-220

TO-3PFHigher creepage for electrical insulation

*’ By Q3’12

19

About Packages

20

PowerFLAT The smart solution to reduce space

Area

150 mm2 64 mm2

Space

Tickness

Weight

Simplicity

4.5mm

D²PAK

2.3mm

DPAK

1mm

PowerFLAT8x8

Thickness

PowerFLAT™ 3.3 x 3.3 HV INNOVATION IN PACKAGES

• Features

• Maximum thickness: 1 mm

• Unequalled low RDS(on) x area

• Clearance / Creepage distance: 1.4 mm

• Benefits

• Compactness

• Higher power density

This innovative HV, 1 mm high, surface-mount package, featured both with ST’s 600V MDmesh™ II and MDmesh™ V technologies, increases power density reducing thickness and weight

PowerFLAT product range

P/N VDS [V] RDS(on) (max) [Ω] Status

STL3NM60N 600 1.8 Samples Available

STL3N65M5 650 1.2 Q3’12 Samples

3x3 HV

P/N VDS [V] RDS(on) (max) [Ω] Status

STL3NK40 400 5 Full Production

STL7NM60N 600 0.9 Full Production

STL11N65M5 650 0.6 Q3’12 Samples

5x5 HV

PowerFLAT product range

P/N VDS [V] RDS(on) (max) [Ω] Status

STL5N52K3 525 1.5 Upon Request

STL4N62K3 620 1.95 Upon Request

STL12N65M5 650 0.530 Samples in Q3’12

STL15N65M5 650 0.374 Samples in Q3’12

STL18N65M5 650 0.240 Samples in Q3’12

STL20N65M5 650 0.200 Samples in Q3’12

STL7N80K5 800 1.2 Samples in Q3’12

STL8N80K5 800 0.99 Samples in Q4’12

5x6 HV

P/NVDS [V]

RDS(on) (max) [Ω] Status

STL18N55M5550

0.216Samples available by Q3 ‘12

STL36N55M5 0.090

STL23NM60ND

600

0.180

Full Production

STL26NM60N 0.185

STL24NM60N 0.215

STL18NM60N 0.309

STL13NM60N 0.385

STL57N65M5

650

0.069 Samples available by Q3 ‘12

STL31N65M5 0.162 Samples available by Q3 ‘12

STL22N65M5 0.200 Samples available by Q3 ‘12

STL18N55M5 0.216 Samples available by Q3 ‘12

STL19N65M5 0.240 Samples available by Q3 ‘12

STL17N65M50.374 Samples available by Q3 ‘12

STL23N85K5 850 0.275 Samples available

PowerFLAT 8x8 product range

26IGBT technologies

27

STG x 60 H 65 DD Fy

BREAKDOWN VOLTAGE ÷÷÷÷10

D = Very Fast RecoveryDR = Ultra Fast RecoveryDL = Low Forward Voltage

DIODE FEATURES

TECHNOLOGY

Fx = Trench Gate Field StopP = Planar PT

y

SPECIAL FEATURES

Exception (if any…)C = Current SensingT = Temperature SensingZ = Clamped by Zener DiodeL = Logic Level

PACKAGE

MAX CONTINUOUS CURRENT @ 100°°°°C

H = High speed (8 ÷ 30 kHz)V = Very High speed (20 ÷ 100 kHz)M = Low Loss ( up to 20 kHz)

TECHNOLOGY SERIES

B = D2PAK D = DPAKE = ISOTOP ®

F = TO-220FPFW = TO-3PF I = I2PAKL = PowerFLAT TM (8x8)P = TO-220U = IPAK (-S for short leads)W = TO-247WA = TO-247 LLWT = TO-3PY = Max247 ®

IGBT: Nomenclature for New Products

Trench Gate Field Stop IGBT:Suitable for high voltage and high current applicat ions

Low EOFF due to improved minority carrier recombination (Field Stop )

Positive Temperature coefficient in VCE(sat)resulting in a safer paralleling operation

Low VCE(sat) (Trench gate)

High switching robusteness (Large SOA)

Low RTH (Thin wafer thickness)

collector

emitter gate

Features Main Applications

PhotoVoltaic

Uninterruptable Power Supply

Welding

Power Factor Corrector

Hybrid Electric Veichles

Induction Heating

1200V IGBT TFS “High Frequency” series

IGBT in Trench Gate Field Stop Technology 1200V break down rated Final die thickness: 110µm Very low RTH

Positive derating of VCE(sat)

Tailored for High speed switching application

Preliminary Results (on packaged parts)

STGW25H120DF

Topology: Full BridgeMain Specs: POut=3kW, fSw=20kHz, DMax=90%, ÎOut≅20A, Tj=125ºC

Device (Trench FS) I C (nom) PCon (W) PSw (W) PTot (W) (*)

STGW25H120DF 25A @ 100°C 11.92 11.15 23.1

Competitor 1 25A @ 100°C 10.37 12.10 22.5

Competitor 2 25A @ 110°C 10.89 12.74 23.6

Competitor 3 25A @ 100°C 13.48 10.51 24.0

Simulated benchmark based on datasheet values

(*) switching-on power losses have been neglected for all the devices under benchmark, since they basically depend of co-packaged diode

Symbol CharacteristicTypical Value

Unit25°C 150°C

BVCES Collector to Emitter breakdown voltage 1200 V

VCESAT VGE= 15V, IC= 25A 2.1 2.3 V

EOFF VCC=600V, VGE=15÷0V, RGOFF=22Ω, IC=25A 0.75 1.63 mJ

MAT 20

Product Features:

Samples Available

650V IGBT TFS “High Frequency” series

IGBT in Trench Gate Field Stop Technology 650V break down rated Final die thickness: 80µm Very low RTH

Positive derating of VCE(sat)

Tailored for High speed switching application

Final Results (on packaged parts)

Symbol CharacteristicTypical Value

Unit25°C 150°C

BVCES Collector to Emitter breakdownvoltage

650 V

VCESAT VGE= 15V, IC=60A 1.9 2.1 V

EOFF VCC= 400V, VGE= 15V÷0, RG= 10Ω, IC= 60A

1.05 1.4 mJ

STGW60H65DF

Topology: Full Bridge

Main Specs: Pout=5kW, fsw=16kHz, DMax=90%, ÎOut≅30A, TJ=150ºC

Device (Trench FS) IC (nom)PCon(W)

PSw(W)

PTot (W)(*)

STGW60H65DF 60A @ 100°C 13.11 4.21 17.3

Competitor 1 50A @ 100°C 13.51 3.67 17.2

Competitor 2 58A @ 100°C 14.70 3.06 17.8

Competitor 3 60A @ 100°C 13.91 4.08 18.0

Simulated benchmark based on datasheet values

(*) switching-on power losses have been neglected for all the devices under benchmark,

since they basically depend of co-packaged diode

MAT 30

Product Features:

31

BVCES` ICN1) VCESAT

@ ICN

Short Circuit 2) Sales Type Main Applications Packages Eng.

SamplesProduction

600 V20 A 1.6 V 6 µs STGP20H60DF

UPS, PFC, motor control

TO-220, FP Available Production

30 A 1.9 V 6 µs STGP30H60DFUPS, PFC, motor control

TO-220, FP, TO-247 Available Production

650 V

60 A 1.9 V 6 µs STGW60H65DF Solar, UPS, PFC TO-247 Available Production

60 A 1.9 V 6 µs STGW60H65DRF Solar, UPS, PFC TO-247 Available Production

600V/650V Discrete IGBT Product PlanH series (8 ÷ 30 kHz)

2) Test condition VCC = 400V, VGE = 15V, TJstart = 25˚C1) continuous IC @ 100°C

TJMAX = 175˚C