high-voltage nanoimprint lithography of refractory metal films dr. john a. dagata
DESCRIPTION
Technology SPM oxidation of silicon [Appl. Phys. Lett (1990)] Electric field induces a water meniscus between the probe tip and substrate Everything oxidizes above 10 8 V/m 500 nm 200 nm 100 nm Major drawback is low throughputTRANSCRIPT
High-voltage nanoimprint lithography of refractory metal films
Dr. John A. Dagata
Benefits of nanoimprint lithography:
Wafer-scale fabrication of micro/nanostructures
Stamp – curable resist - thermal or laser energy source
Advantages of incorporating an electric field:
Induces a wide range of chemical reaction and mass transport mechanisms
Beyond standard fab materials processing
Functionalize organics localize nanoparticles oxidize metal films
Technology •SPM oxidation of silicon [Appl. Phys. Lett. 56 2001 (1990)]•Electric field induces a water meniscus between the probe tip and substrate•Everything oxidizes above 108 V/m
500 nm 200 nm 100 nm
Major drawback is low throughput
Si
SPM tip
V dc _ +
Si
Stamp 15 - 20V _ +
Pressure
Water
Water meniscus
Si
SPM tip
V dc _ +
Si
Stamp 15 - 20V _ +
Pressure
Water
Water meniscus
NTT Japan 2003-2008 silicon
Univ Bologna-IMMUniv Bologna-Univ Barcelona
Italy/Spain 20032003-2008
siliconMn12 SMMs
Weizmann Inst. Israel 2003-2006 SAMs
NIST – Univ Akron USA 2004-2006 Refractory metal films
Tsing-hua Univ Taiwan 2006 Gold nanoparticles
Overcome the throughput problem by extending a serial concept to a parallel one:
Commercial Applications:
Photonic waveguides and crystals •Optical communications
Nanoelectromechanical systems•Sensors/actuators
Biochips100 µm 100 µm
Stamp
Oxide50 µm
Stamp Oxide
100 µm 100 µm
Stamp
Oxide50 µm
Stamp Oxide
100 µm 100 µm100 µm 100 µm
Stamp
Oxide50 µm
Stamp Oxide
ZrN/ZrO
Application:
Fabrication of MRI calibration prototypes
FeNSi
Si stamp
FeN
Distance (µm)
Z D
ata
( nm
)
0
43.25
86.5
129.75
173 nm
0 12 24 36 48 60 µm
1
1
20 nm 10 µm
SPMiron thin-film phantom
1000 um100 um
optical
MRI
10 um
MFM
SPM
Collaboration Opportunities:
CRADASBIR
For technical details see the poster:
High-voltage nanoimprint lithography of refractory metal filmsN. Farkas, et al.
Contact Information:John A. Dagata
Precision Engineering DivisionManufacturing Engineering Laboratory
National Institute of Standards & Technology100 Bureau Drive MS 8212
Gaithersburg MD 20899-8212301-975-3597 tel.301-869-0822 fax