VLSl

ECL RAMFamilYOfHighSpeedECLRAMs

ECL RAM,

,OA,,

ECL RAM

,,1.3mHi-BiCMOS64k

/12ns,16k/10ns1.mU-ISO4k/5

ns,ECL RAMECL RAM,

,

,,

n

ECL RAM(EmitterCoupled Logic Random Ac-

CeSSMemory),,

,

ECL RAM

,,,ECL RAM

,

,FA(FactoryAutomation)CAD/CAM(Computer

AidedDesign/ComputerAidedManufacturing)

,

,

ECL,

,4k

64kECL RAM

,ECL RAM

1.3JJmHBiCMOS(High Performance Bipolar Com-

plementaryMeta10ideSemiconductor)1.0m

U-ISO(U-grOOVeIsolation),

,ASIC(Ap-

plicationSpecificIntegrated Circuits)

8

1,

2,164kECJRAM16kECJRAM

64kECL RAM``HMlOO490/10490,64k

1ECLlOOk/10k

*11-/**11`ir.

.D.C.21.3.049.77414:81.327.7

* 0Od

* C

** '0

RAM,15ns/12ns,

10ns,64k

1)0.32W/0.42W,

,

CMOS

,1.3/JmHi-BiCMOS

DIP(DualInLinePackage),

LCC(Leadless Chip Carrier)FPG(ce-

ramicFlatPackage),1.3JnHi-BiCMOS

10ns16kECL RAM,4

"HMlOO484''1"HMlOO480''

,,

10k"HMlO484,"HMlO480

1.3JnHi-BiCMOS

ECL RAM,

,

,

,

2.2 4kECL RAM

4kECL RAM"HMlOO474'',1k4

ECLlOOkRAM

,5ns,3.5

nsRAM,

1.m1.0/JmUISO

,10k"HMlO474

,

73

668 VO+.69 No.7(87)

lECL RAM 4k64k,,,

r

4k 16k 64k

HMlOO474-5 HMlO474-5 HMlOO484-10 HMlOO480-10 HMlOO490-15 HMlO490-12/15

l.0mU-1SO l.3/JmHBiCMOS

l024 l024 4096 384 65536 65536

4 4 4 l l

ECLlOOk ECJlOk ECLlOOk ECLlOOk ECJlOOk ECLlOk

nS 5 5 10 10 15 /15

nS 3,5 3.5 6 6 10 10

W l.0 l.1 0.65 0.6 0.32 0.42

FPG24

LCC24FPG24

DG28

FPG28DG20

LCC22

FPG22

DG22

DG22

LCC28

: -1SOGroovelsolation() FPG(ceramic Flat Package)

Hi-BiCMOS(Hjgh Performance Bipolar Complementary Meta10ide Semiconductor) LCC(+eadless Chip Carrjer)

ECL(Emitter Co=Pled Logic) DGDualinJine Package(Cerdip)

,

,

ECL RAM=,

,,

X

X

64k:256256

16k:128128

4k:6464

Y

Y

I ECL RAM 50%

,,L

74

,,Y,

,,RAM

,

,,50%

F),

Hi-BiCMOSRAM,MOS

SRAM(Static RAM),

NMOS,RAM

,()

3ll.3/JmHBiCMOS

,ECL RAM,

,16k64k

,,

CMOS

2/JmHi-BiCMOS,

25ns64kTTL(Transistor Transistor

Logic)/ECL RAM2)3)

,1.3JJmHi-BiCMOS,

RAM,64k12ns,16k

10ns2

CMOS,NP

1.2mCMOS,

,13Jn2

,2/Jm,

,

,

0.15JJm0.3/n,

,2Jm

PMOS NMOS 1 2

N

NP PN,N

N P N p

P

ECL RAM 669

:

CMOS(Complementary Meta10xide Semiconductor)

PMOS(PMOS)

NMOS(NMOS)D

=13/2

=0.15m

=0.30/m

cMOS

=1.2/Jm

=25nm

21.3/Hi-BiCMOS lml.31CMOS

4GHz,1.3/Jm7GHz

LSI

32/Jm1.3JnBi-

CMOS,ECL

0.45ns/,0.3ns/2.m

1.6

3.2l.mU-tSO

,8i-CMOS

10ns,5ns

,

,BCMOS,1

ECL RAM

,ECL(

0.35V)MOS(5V)

N

670 OL.69 No.7(1987-7)

C100k

__1

T L.__

SBD

__T-

(a)

SBD

SBD

C

N-

ECJRAM 671

;)

=

U

(11S)

7 64kECJRAM

12ns

L

JJJ

rJJ44444444hqrJ

rOJJJ5D

(>)

9

;

==

===!=====!=====!

-h-

000 4.D O 5_Ol0

(rlS)

=========-

=====!========!=============!===========

===========!

=============!============!==========l

==========

---1-- - -----6_000 .000(TAA)

4kECJRAM

5ns

LSI,LSI

,LSILSI

(b),,LSI

LSI

`-T

/1///// l+

(>)

=

,==

=

_====

========

n

+U

(ns)

8 64kECL RAM

-5.2V,4.4ns

(>)

=-=

----

5- D D O

(ns)

10 4kECL RAM

-4-6V,2.4ns

,,

,12,8LSIl,

5)

7

//+Sl//

7// /+J_-_.J_J

LSl

(a)

7=/-

r.

++

+

-

>

//+__+

r-

//

___+_+

/L

-

_/LSl

/ / /

_L____+_J

+Sl

-------=------

7rr

1////

>/

>/

/

_____l_+_____

(b) (c) LSl

IlECL RAM (b),+SLSl(

),,(C)l

+Sl

77

672 VOL.69 No.7(1987-7)

12 4k/2.5nstypRAM8

0.7k0.2ns/

,L

13 LS1 7k/6nstyp

l.2k0.25ns/LS=

78

,(c),LSILSI

70F),70

,

13LSI,IA(Index Array)

,7k1,200

,(M-

680)

,,

,

,,

ASIC(Application

SpecificIC)

8

ECL RAM

,1.3/JmHBiCMOS64k/

12ns,16k/10ns1.mU-ISO4k

/5nsECL RAM

ECL RAM,

,

,

,ECL RAM

,

,

,ECL RAM

,

,

ASIC

1)S.Miyaoka,et al.:A7ns/350mW64k ECL Compatible

RAM,ISSCCDIGESTofTECHNICALPAPERS,p.132

133(Feb.1987)

2)K.Ogiue,etal13ns 500mW,64kbitECLRAMUsingHI-

BICMOS Technology,IEEEJournalof Solid-State Cir-

Cuits,Vol.SC-21,NO5,1986,p.681685

3),:Hi-BiCMOS,,68,7,p.533

538(67)

4)Y.Nishioka,et alHighCapacitance Ultra-Thin Ta205

DielectricFilmAppliedtoaHighSpeedBipolarMemory

Cell,IEEEIEDMTechnicalDigest,p.4245(Dec.1985)

5)M.Iwabuchi,et al A7ns128k Multi-Chip ECL RAM-

With-Logic Module,ISSCC DIGEST OF TECHNICAL

PAPERS,p.226227(Feb.1987)