dual general purpose transistor npn+pnp silicon …. a/cz 2010-03-15 mbt3946dw dual general purpose...
TRANSCRIPT
Rev. A/CZ 2010-03-15
MBT3946DW
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Page 1 of 14 Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
Dual General PurposeTransistor NPN+PNP Silicon
Dual General Purpose Transistor
NPN+PNP Silicon
Features
• RoHS compliance
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol Description MBT3946DW Unit
NPN 40 VCEO Collector-Emitter Voltage PNP -40 V
NPN 60 VCBO Collector-Base Voltage PNP -40 V
NPN 6.0 VEBO Emitter-Base Voltage PNP -5.0 V
NPN 200 IC Collector Current PNP -200 mA
PD Total Device Dissipation TA=25 °C (Note 1) 150 mW
R θJA Thermal Resistance, Junction to Ambient 833 °C/W
TJ,TSTG Junction and Storage, Temperature -55 to +150 °C
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol Description Min. Max. Unit Conditions
NPN 40 - IC=1mA, IB=0 V(BR)CEO Collector-Emitter Breakdown Voltage (Note 2) PNP -40 -
V IC=-1mA, IB=0
NPN 60 - IC=10µA, IE=0 V(BR)CBO Collector-Base Breakdown Voltage PNP -40 -
V IC=-10µA, IE=0
NPN 6.0 - IE=10µA, IC=0 V(BR)EBO Emitter-Base Breakdown VoltagePNP -5.0 -
V IE=-10µA, IC=0
NPN - 50 VCE=30V, VEB=3.0V IBL Base Cutoff Current PNP - -50
nA VCE=-30V, VEB=-3.0V
NPN - 50 VCE=30V, VEB=3.0V ICEX Collector Cutoff Current PNP - -50
nA VCE=-30V, VEB=-3.0V
Note 1. Device Mounted FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤300uS, Duty Cycle≤ 2.0%.
SOT-363
Rev. A/CZ 2010-03-15
MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
www.taitroncomponents.com Page 2 of 14
On Characteristics (Note 2)
Symbol Description Min. Max. Unit Conditions
40 - VCE=1V, IC=0.1mA 70 - VCE=1V, IC=1mA 100 300 VCE=1V, IC=10mA 60 - VCE=1V, IC=50mA
NPN
30 - VCE=1V, IC=100mA 60 VCE=-1V, IC=-0.1mA 80 VCE=-1V, IC=-1mA 100 300 VCE=-1V, IC=-10mA 60 VCE=-1V, IC=-50mA
hFE D.C. Current Gain
PNP
30
-
VCE=-1V, IC=-100mA - 0.2 IC=10mA, IB=1mA
NPN - 0.3 IC=50mA, IB=5mA - -0.25 IC=-10mA, IB=-1mA
VCE(sat) Collector-Emitter Saturation Voltage
PNP - -0.40
V
IC=-50mA, IB=-5mA 0.65 0.85 IC=10mA, IB=1mA
NPN - 0.95 IC=50mA, IB=5mA
-0.65 -0.85 IC=-10mA, IB=-1mA VBE(sat) Base-Emitter Saturation Voltage
PNP - -0.95
V
IC=-50mA, IB=-5mA
Rev. A/CZ 2010-03-15
MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
www.taitroncomponents.com Page 3 of 14
Small-signal Characteristics
Symbol Description Min. Max. Unit Conditions
NPN 300 - VCE=20V, IC=10mA, f=100MHz fT Current Gain-Bandwidth Product
PNP 250 - MHz
VCE=-20V, IC=-10mA, f=100MHz
NPN - 4.0 VCB=5V, IE=0, f=1.0MHz Cobo Output Capacitance
PNP - 4.5 pF
VCB=-5V, IE=0, f=1.0MHz
NPN - 8.0 VEB=0.5V, IC=0, f=1.0MHz Cibo Input Capacitance
PNP - 10.0 pF
VEB=-0.5V, IC=0, f=1.0MHz
NPN 1.0 10 VCE= 10 V, IC=1.0mA, f=1.0 kHz hie Input Impedance
PNP 2.0 12 K Ω VCE= -10 V, IC=-1.0mA,
f=1.0 kHz NPN 0.5 8.0 VCE= 10V, IC=1.0mA,
f=1.0 kHz hre Voltage Feedback Radio PNP 0.1 10
x 10-4 VCE=-10V, IC=-1.0mA, f=1.0 kHz
NPN 100 400 VCE= 10V, IC=1.0mA, f=1.0 kHz hfe Small-Signal Current Gain
PNP 100 400 - VCE= -10V, IC=-1.0mA,
f=1.0 kHz
NPN 1.0 40 VCE= 10V, IC=1.0mA, f=1.0 kHz hoe Output Admittance
PNP 3.0 60 μ mhos VCE= -10V, IC=-1.0mA,
f=1.0 kHz
NPN - 5.0 VCE= 5.0V, IC= 100μA, RS=1.0kΩ, f=1.0kHz NF Noise Figure
PNP - 4.0 dB
VCE= -5.0V, IC= -100μA, RS=1.0kΩ, f=1.0kHz
Rev. A/CZ 2010-03-15
MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
www.taitroncomponents.com Page 4 of 14
Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time
Switching Characteristics
Symbol Description Min. Max. Unit Conditions
NPN - 35 VCC= 3.0 V, VBE= -0.5 VIC= 10mA, IB1= 1.0mA td Delay Time
PNP - 35 ns VCC= -3.0 V, VBE= 0.5 V
IC= -10mA, IB1= -1.0mA
NPN - 35 VCC= 3.0 V, VBE= -0.5 VIC= 10mA, IB1= 1.0mA tr Rise Time
PNP - 35 ns VCC= -3.0 V, VBE= 0.5 V
IC= -10mA, IB1= -1.0mA
NPN - 200 VCC= 3.0 V,IC= 10mA, IB1=IB2= 1.0mA ts Storage Time
PNP - 225 ns VCC= -3.0 V,IC= -10mA,
IB1=IB2= -1.0mA
NPN - 50 VCC= 3.0 V,IC= 10mA, IB1=IB2= 1.0mA tf Fall Time
PNP - 75 ns VCC= -3.0 V,IC= -10mA,
IB1=IB2= -1.0mA
Equivalent Test Circuit (NPN)
Total Shunt Capacitance of test jig and connectors
Rev. A/CZ 2010-03-15
MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
www.taitroncomponents.com Page 5 of 14
Fig.3- Capacitance
Reverse Bias Voltage (V)
Fig.4- Charge Data
Collector Current IC (mA)
Fig.5- Turn-On Time
Collector Current IC (mA)
Fig.6- Rise Time
Collector Current IC (mA)
Typical Characteristics Curves (NPN) ( TJ =25°C --- TJ =125°C )
Cap
acita
nce
(pF)
Cha
rge
Q (p
C)
Tim
e (n
s)
Ris
e Ti
me
t r (n
S)
Rev. A/CZ 2010-03-15
MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
www.taitroncomponents.com Page 6 of 14
Fig.7- Storage Time
Collector Current IC (mA)
Fig.8- Fall Time
Collector Current IC (mA)
Fig.9- Noise Figure
Frequency f (kHz)
Fig.10- Noise Figure
Source Resistance RS (kΩ)
Typical Audio Small-Signal Characteristics Noise Figure Variations (NPN)
(VCE=5.0 V. TA=25°C, Bandwidth=1.0Hz)
Stor
age
Tim
e t s
(ns)
Fall
Tim
e t f
(ns)
Noi
se F
igur
e N
F (d
B)
Noi
se F
igur
e N
F (dB
)
Rev. A/CZ 2010-03-15
MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
www.taitroncomponents.com Page 7 of 14
Fig.11- Current Gain
Collector Current IC (mA)
Fig.12- Output Admittance
Collector Current IC (mA)
Fig.13- Input Impedance
Collector Current IC (mA)
Fig.14- Voltage Feedback Ration
Collector Current IC (mA)
h Parameters (NPN) (VCE=10V, f=1.0kHz, TA=25°C)
Cur
rent
Gai
n h f
e
Out
put A
dmitt
ance
hoe
(μ m
hos)
Inpu
t Im
peda
nce
hie
(KΩ
)
Volta
ge F
eedb
ack
Rat
io h
fe (x
10-4
)
Rev. A/CZ 2010-03-15
MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
www.taitroncomponents.com Page 8 of 14
Fig.15- DC Current Gain
Collector Current IC (mA)
Fig.16- Collector Saturation Region
Base Current IB (mA) Fig.17- “On” Voltage
Collector Current IC (mA)
Fig.18- Temperature Coefficients
Collector Current IC (mA)
Typical Static Characteristics (NPN)
DC
Cur
rent
Gai
n h F
E (N
orm
aliz
ed)
Col
lect
or-E
mitt
er V
olta
ge V
CE
(V)
Volta
ge (V
)
Tem
pera
ture
Coe
ffici
ent (
mV/
°C)
Rev. A/CZ 2010-03-15
MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
www.taitroncomponents.com Page 9 of 14
Fig.19- Delay and Rise Time Fig.20- Storage and Fall Time
Fig.21- Capacitance
Reverse Bias Voltage (V)
Fig.22- Charge Data
Collector Current IC (mA)
Equivalent Test Circuit (PNP)
Total Shunt Capacitance of test jig and connectors
Typical Characteristics Curves (PNP) ( TJ =25°C --- TJ =125°C )
Cap
acita
nce
(pF)
Cha
rge
Q (p
C)
Rev. A/CZ 2010-03-15
MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
www.taitroncomponents.com Page 10 of
Fig.23- Turn-On Time
Collector Current IC (mA)
Fig.24- Fall Time
Collector Current IC (mA)
Fig.25- Noise Figure
Frequency f (kHz)
Fig.26- Noise Figure
Source Resistance RS (kΩ)
Typical Audio Small-Signal Characteristics Noise Figure Variations (PNP) (VCE=-5.0 V. TA=25°C, Bandwidth=1.0Hz)
Tim
e (n
s)
Fall
Tim
e t f
(nS)
Noi
se F
igur
e N
F (d
B)
Noi
se F
igur
e N
F (dB
)
Rev. A/CZ 2010-03-15
MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
www.taitroncomponents.com Page 11 of
Fig.27- Current Gain
Collector Current IC (mA)
Fig.28- Output Admittance
Collector Current IC (mA)
Fig.29- Input Impedance
Collector Current IC (mA)
Fig.30- Voltage Feedback Ration
Collector Current IC (mA)
h Parameters (PNP) (VCE=-10V, f=1.0kHz, TA=25°C)
Cur
rent
Gai
n h f
e
Out
put A
dmitt
ance
hoe
(μ m
hos)
Inpu
t Im
peda
nce
hie
(KΩ
)
Volta
ge F
eedb
ack
Rat
io h
fe (x
10-4
)
Rev. A/CZ 2010-03-15
MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
www.taitroncomponents.com Page 12 of
Fig.31- DC Current Gain
Collector Current IC (mA)
Fig.32- Collector Saturation Region
Base Current IB (mA)
Fig.34- Temperature Coefficients
Collector Current IC (mA)
Fig.33- “On” Voltage
Collector Current IC (mA)
Typical Static Characteristics (PNP)
DC
Cur
rent
Gai
n h F
E (N
orm
aliz
ed)
Col
lect
or-E
mitt
er V
olta
ge V
CE
(V)
Volta
ge (V
)
Tem
pera
ture
Coe
ffici
ent (
mV/
°C)
Rev. A/CZ 2010-03-15
MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
www.taitroncomponents.com Page 13 of
Device Marking: MBT3946DW=46 Dimensions in mm
SOT-363 DIM MIN MAX
A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 REF E 0.30 0.40 H 1.80 2.20 J - 0.10 K 0.80 1.10 L 0.25 0.40 M 0.10 0.25
Rev. A/CZ 2010-03-15
MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
www.taitroncomponents.com Page 14 of
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