dual general purpose transistor npn+pnp silicon …. a/cz 2010-03-15 mbt3946dw dual general purpose...

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Rev. A/CZ 2010-03-15 MBT3946DW TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Page 1 of 14 Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415 Dual General Purpose Transistor NPN+PNP Silicon Dual General Purpose Transistor NPN+PNP Silicon Features RoHS compliance Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MBT3946DW Unit NPN 40 V CEO Collector-Emitter Voltage PNP -40 V NPN 60 V CBO Collector-Base Voltage PNP -40 V NPN 6.0 V EBO Emitter-Base Voltage PNP -5.0 V NPN 200 I C Collector Current PNP -200 mA P D Total Device Dissipation TA=25 °C (Note 1) 150 mW R θJA Thermal Resistance, Junction to Ambient 833 °C/W T J ,T STG Junction and Storage, Temperature -55 to +150 °C Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Max. Unit Conditions NPN 40 - I C =1mA, I B =0 V (BR)CEO Collector-Emitter Breakdown Voltage (Note 2) PNP -40 - V I C =-1mA, I B =0 NPN 60 - I C =10μA, I E =0 V (BR)CBO Collector-Base Breakdown Voltage PNP -40 - V I C =-10μA, I E =0 NPN 6.0 - I E =10μA, I C =0 V (BR)EBO Emitter-Base Breakdown Voltage PNP -5.0 - V I E =-10μA, I C =0 NPN - 50 V CE =30V, V EB =3.0V I BL Base Cutoff Current PNP - -50 nA V CE =-30V, V EB =-3.0V NPN - 50 V CE =30V, V EB =3.0V I CEX Collector Cutoff Current PNP - -50 nA V CE =-30V, V EB =-3.0V Note 1. Device Mounted FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300uS, Duty Cycle2.0%. SOT-363

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Page 1: Dual General Purpose Transistor NPN+PNP Silicon …. A/CZ 2010-03-15 MBT3946DW Dual General Purpose Tr ansistor NPN+PNP Silicon Page 3 of 14 Small-signal Characteristics Symbol Description

Rev. A/CZ 2010-03-15

MBT3946DW

TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com

Page 1 of 14 Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415

Dual General PurposeTransistor NPN+PNP Silicon

Dual General Purpose Transistor

NPN+PNP Silicon

Features

• RoHS compliance

Maximum Ratings (T Ambient=25ºC unless noted otherwise)

Symbol Description MBT3946DW Unit

NPN 40 VCEO Collector-Emitter Voltage PNP -40 V

NPN 60 VCBO Collector-Base Voltage PNP -40 V

NPN 6.0 VEBO Emitter-Base Voltage PNP -5.0 V

NPN 200 IC Collector Current PNP -200 mA

PD Total Device Dissipation TA=25 °C (Note 1) 150 mW

R θJA Thermal Resistance, Junction to Ambient 833 °C/W

TJ,TSTG Junction and Storage, Temperature -55 to +150 °C

Electrical Characteristics (T Ambient=25ºC unless noted otherwise)

Off Characteristics

Symbol Description Min. Max. Unit Conditions

NPN 40 - IC=1mA, IB=0 V(BR)CEO Collector-Emitter Breakdown Voltage (Note 2) PNP -40 -

V IC=-1mA, IB=0

NPN 60 - IC=10µA, IE=0 V(BR)CBO Collector-Base Breakdown Voltage PNP -40 -

V IC=-10µA, IE=0

NPN 6.0 - IE=10µA, IC=0 V(BR)EBO Emitter-Base Breakdown VoltagePNP -5.0 -

V IE=-10µA, IC=0

NPN - 50 VCE=30V, VEB=3.0V IBL Base Cutoff Current PNP - -50

nA VCE=-30V, VEB=-3.0V

NPN - 50 VCE=30V, VEB=3.0V ICEX Collector Cutoff Current PNP - -50

nA VCE=-30V, VEB=-3.0V

Note 1. Device Mounted FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤300uS, Duty Cycle≤ 2.0%.

SOT-363

Page 2: Dual General Purpose Transistor NPN+PNP Silicon …. A/CZ 2010-03-15 MBT3946DW Dual General Purpose Tr ansistor NPN+PNP Silicon Page 3 of 14 Small-signal Characteristics Symbol Description

Rev. A/CZ 2010-03-15

MBT3946DW

Dual General Purpose Transistor NPN+PNP Silicon

www.taitroncomponents.com Page 2 of 14

On Characteristics (Note 2)

Symbol Description Min. Max. Unit Conditions

40 - VCE=1V, IC=0.1mA 70 - VCE=1V, IC=1mA 100 300 VCE=1V, IC=10mA 60 - VCE=1V, IC=50mA

NPN

30 - VCE=1V, IC=100mA 60 VCE=-1V, IC=-0.1mA 80 VCE=-1V, IC=-1mA 100 300 VCE=-1V, IC=-10mA 60 VCE=-1V, IC=-50mA

hFE D.C. Current Gain

PNP

30

-

VCE=-1V, IC=-100mA - 0.2 IC=10mA, IB=1mA

NPN - 0.3 IC=50mA, IB=5mA - -0.25 IC=-10mA, IB=-1mA

VCE(sat) Collector-Emitter Saturation Voltage

PNP - -0.40

V

IC=-50mA, IB=-5mA 0.65 0.85 IC=10mA, IB=1mA

NPN - 0.95 IC=50mA, IB=5mA

-0.65 -0.85 IC=-10mA, IB=-1mA VBE(sat) Base-Emitter Saturation Voltage

PNP - -0.95

V

IC=-50mA, IB=-5mA

Page 3: Dual General Purpose Transistor NPN+PNP Silicon …. A/CZ 2010-03-15 MBT3946DW Dual General Purpose Tr ansistor NPN+PNP Silicon Page 3 of 14 Small-signal Characteristics Symbol Description

Rev. A/CZ 2010-03-15

MBT3946DW

Dual General Purpose Transistor NPN+PNP Silicon

www.taitroncomponents.com Page 3 of 14

Small-signal Characteristics

Symbol Description Min. Max. Unit Conditions

NPN 300 - VCE=20V, IC=10mA, f=100MHz fT Current Gain-Bandwidth Product

PNP 250 - MHz

VCE=-20V, IC=-10mA, f=100MHz

NPN - 4.0 VCB=5V, IE=0, f=1.0MHz Cobo Output Capacitance

PNP - 4.5 pF

VCB=-5V, IE=0, f=1.0MHz

NPN - 8.0 VEB=0.5V, IC=0, f=1.0MHz Cibo Input Capacitance

PNP - 10.0 pF

VEB=-0.5V, IC=0, f=1.0MHz

NPN 1.0 10 VCE= 10 V, IC=1.0mA, f=1.0 kHz hie Input Impedance

PNP 2.0 12 K Ω VCE= -10 V, IC=-1.0mA,

f=1.0 kHz NPN 0.5 8.0 VCE= 10V, IC=1.0mA,

f=1.0 kHz hre Voltage Feedback Radio PNP 0.1 10

x 10-4 VCE=-10V, IC=-1.0mA, f=1.0 kHz

NPN 100 400 VCE= 10V, IC=1.0mA, f=1.0 kHz hfe Small-Signal Current Gain

PNP 100 400 - VCE= -10V, IC=-1.0mA,

f=1.0 kHz

NPN 1.0 40 VCE= 10V, IC=1.0mA, f=1.0 kHz hoe Output Admittance

PNP 3.0 60 μ mhos VCE= -10V, IC=-1.0mA,

f=1.0 kHz

NPN - 5.0 VCE= 5.0V, IC= 100μA, RS=1.0kΩ, f=1.0kHz NF Noise Figure

PNP - 4.0 dB

VCE= -5.0V, IC= -100μA, RS=1.0kΩ, f=1.0kHz

Page 4: Dual General Purpose Transistor NPN+PNP Silicon …. A/CZ 2010-03-15 MBT3946DW Dual General Purpose Tr ansistor NPN+PNP Silicon Page 3 of 14 Small-signal Characteristics Symbol Description

Rev. A/CZ 2010-03-15

MBT3946DW

Dual General Purpose Transistor NPN+PNP Silicon

www.taitroncomponents.com Page 4 of 14

Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time

Switching Characteristics

Symbol Description Min. Max. Unit Conditions

NPN - 35 VCC= 3.0 V, VBE= -0.5 VIC= 10mA, IB1= 1.0mA td Delay Time

PNP - 35 ns VCC= -3.0 V, VBE= 0.5 V

IC= -10mA, IB1= -1.0mA

NPN - 35 VCC= 3.0 V, VBE= -0.5 VIC= 10mA, IB1= 1.0mA tr Rise Time

PNP - 35 ns VCC= -3.0 V, VBE= 0.5 V

IC= -10mA, IB1= -1.0mA

NPN - 200 VCC= 3.0 V,IC= 10mA, IB1=IB2= 1.0mA ts Storage Time

PNP - 225 ns VCC= -3.0 V,IC= -10mA,

IB1=IB2= -1.0mA

NPN - 50 VCC= 3.0 V,IC= 10mA, IB1=IB2= 1.0mA tf Fall Time

PNP - 75 ns VCC= -3.0 V,IC= -10mA,

IB1=IB2= -1.0mA

Equivalent Test Circuit (NPN)

Total Shunt Capacitance of test jig and connectors

Page 5: Dual General Purpose Transistor NPN+PNP Silicon …. A/CZ 2010-03-15 MBT3946DW Dual General Purpose Tr ansistor NPN+PNP Silicon Page 3 of 14 Small-signal Characteristics Symbol Description

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MBT3946DW

Dual General Purpose Transistor NPN+PNP Silicon

www.taitroncomponents.com Page 5 of 14

Fig.3- Capacitance

Reverse Bias Voltage (V)

Fig.4- Charge Data

Collector Current IC (mA)

Fig.5- Turn-On Time

Collector Current IC (mA)

Fig.6- Rise Time

Collector Current IC (mA)

Typical Characteristics Curves (NPN) ( TJ =25°C --- TJ =125°C )

Cap

acita

nce

(pF)

Cha

rge

Q (p

C)

Tim

e (n

s)

Ris

e Ti

me

t r (n

S)

Page 6: Dual General Purpose Transistor NPN+PNP Silicon …. A/CZ 2010-03-15 MBT3946DW Dual General Purpose Tr ansistor NPN+PNP Silicon Page 3 of 14 Small-signal Characteristics Symbol Description

Rev. A/CZ 2010-03-15

MBT3946DW

Dual General Purpose Transistor NPN+PNP Silicon

www.taitroncomponents.com Page 6 of 14

Fig.7- Storage Time

Collector Current IC (mA)

Fig.8- Fall Time

Collector Current IC (mA)

Fig.9- Noise Figure

Frequency f (kHz)

Fig.10- Noise Figure

Source Resistance RS (kΩ)

Typical Audio Small-Signal Characteristics Noise Figure Variations (NPN)

(VCE=5.0 V. TA=25°C, Bandwidth=1.0Hz)

Stor

age

Tim

e t s

(ns)

Fall

Tim

e t f

(ns)

Noi

se F

igur

e N

F (d

B)

Noi

se F

igur

e N

F (dB

)

Page 7: Dual General Purpose Transistor NPN+PNP Silicon …. A/CZ 2010-03-15 MBT3946DW Dual General Purpose Tr ansistor NPN+PNP Silicon Page 3 of 14 Small-signal Characteristics Symbol Description

Rev. A/CZ 2010-03-15

MBT3946DW

Dual General Purpose Transistor NPN+PNP Silicon

www.taitroncomponents.com Page 7 of 14

Fig.11- Current Gain

Collector Current IC (mA)

Fig.12- Output Admittance

Collector Current IC (mA)

Fig.13- Input Impedance

Collector Current IC (mA)

Fig.14- Voltage Feedback Ration

Collector Current IC (mA)

h Parameters (NPN) (VCE=10V, f=1.0kHz, TA=25°C)

Cur

rent

Gai

n h f

e

Out

put A

dmitt

ance

hoe

(μ m

hos)

Inpu

t Im

peda

nce

hie

(KΩ

)

Volta

ge F

eedb

ack

Rat

io h

fe (x

10-4

)

Page 8: Dual General Purpose Transistor NPN+PNP Silicon …. A/CZ 2010-03-15 MBT3946DW Dual General Purpose Tr ansistor NPN+PNP Silicon Page 3 of 14 Small-signal Characteristics Symbol Description

Rev. A/CZ 2010-03-15

MBT3946DW

Dual General Purpose Transistor NPN+PNP Silicon

www.taitroncomponents.com Page 8 of 14

Fig.15- DC Current Gain

Collector Current IC (mA)

Fig.16- Collector Saturation Region

Base Current IB (mA) Fig.17- “On” Voltage

Collector Current IC (mA)

Fig.18- Temperature Coefficients

Collector Current IC (mA)

Typical Static Characteristics (NPN)

DC

Cur

rent

Gai

n h F

E (N

orm

aliz

ed)

Col

lect

or-E

mitt

er V

olta

ge V

CE

(V)

Volta

ge (V

)

Tem

pera

ture

Coe

ffici

ent (

mV/

°C)

Page 9: Dual General Purpose Transistor NPN+PNP Silicon …. A/CZ 2010-03-15 MBT3946DW Dual General Purpose Tr ansistor NPN+PNP Silicon Page 3 of 14 Small-signal Characteristics Symbol Description

Rev. A/CZ 2010-03-15

MBT3946DW

Dual General Purpose Transistor NPN+PNP Silicon

www.taitroncomponents.com Page 9 of 14

Fig.19- Delay and Rise Time Fig.20- Storage and Fall Time

Fig.21- Capacitance

Reverse Bias Voltage (V)

Fig.22- Charge Data

Collector Current IC (mA)

Equivalent Test Circuit (PNP)

Total Shunt Capacitance of test jig and connectors

Typical Characteristics Curves (PNP) ( TJ =25°C --- TJ =125°C )

Cap

acita

nce

(pF)

Cha

rge

Q (p

C)

Page 10: Dual General Purpose Transistor NPN+PNP Silicon …. A/CZ 2010-03-15 MBT3946DW Dual General Purpose Tr ansistor NPN+PNP Silicon Page 3 of 14 Small-signal Characteristics Symbol Description

Rev. A/CZ 2010-03-15

MBT3946DW

Dual General Purpose Transistor NPN+PNP Silicon

www.taitroncomponents.com Page 10 of

Fig.23- Turn-On Time

Collector Current IC (mA)

Fig.24- Fall Time

Collector Current IC (mA)

Fig.25- Noise Figure

Frequency f (kHz)

Fig.26- Noise Figure

Source Resistance RS (kΩ)

Typical Audio Small-Signal Characteristics Noise Figure Variations (PNP) (VCE=-5.0 V. TA=25°C, Bandwidth=1.0Hz)

Tim

e (n

s)

Fall

Tim

e t f

(nS)

Noi

se F

igur

e N

F (d

B)

Noi

se F

igur

e N

F (dB

)

Page 11: Dual General Purpose Transistor NPN+PNP Silicon …. A/CZ 2010-03-15 MBT3946DW Dual General Purpose Tr ansistor NPN+PNP Silicon Page 3 of 14 Small-signal Characteristics Symbol Description

Rev. A/CZ 2010-03-15

MBT3946DW

Dual General Purpose Transistor NPN+PNP Silicon

www.taitroncomponents.com Page 11 of

Fig.27- Current Gain

Collector Current IC (mA)

Fig.28- Output Admittance

Collector Current IC (mA)

Fig.29- Input Impedance

Collector Current IC (mA)

Fig.30- Voltage Feedback Ration

Collector Current IC (mA)

h Parameters (PNP) (VCE=-10V, f=1.0kHz, TA=25°C)

Cur

rent

Gai

n h f

e

Out

put A

dmitt

ance

hoe

(μ m

hos)

Inpu

t Im

peda

nce

hie

(KΩ

)

Volta

ge F

eedb

ack

Rat

io h

fe (x

10-4

)

Page 12: Dual General Purpose Transistor NPN+PNP Silicon …. A/CZ 2010-03-15 MBT3946DW Dual General Purpose Tr ansistor NPN+PNP Silicon Page 3 of 14 Small-signal Characteristics Symbol Description

Rev. A/CZ 2010-03-15

MBT3946DW

Dual General Purpose Transistor NPN+PNP Silicon

www.taitroncomponents.com Page 12 of

Fig.31- DC Current Gain

Collector Current IC (mA)

Fig.32- Collector Saturation Region

Base Current IB (mA)

Fig.34- Temperature Coefficients

Collector Current IC (mA)

Fig.33- “On” Voltage

Collector Current IC (mA)

Typical Static Characteristics (PNP)

DC

Cur

rent

Gai

n h F

E (N

orm

aliz

ed)

Col

lect

or-E

mitt

er V

olta

ge V

CE

(V)

Volta

ge (V

)

Tem

pera

ture

Coe

ffici

ent (

mV/

°C)

Page 13: Dual General Purpose Transistor NPN+PNP Silicon …. A/CZ 2010-03-15 MBT3946DW Dual General Purpose Tr ansistor NPN+PNP Silicon Page 3 of 14 Small-signal Characteristics Symbol Description

Rev. A/CZ 2010-03-15

MBT3946DW

Dual General Purpose Transistor NPN+PNP Silicon

www.taitroncomponents.com Page 13 of

Device Marking: MBT3946DW=46 Dimensions in mm

SOT-363 DIM MIN MAX

A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 REF E 0.30 0.40 H 1.80 2.20 J - 0.10 K 0.80 1.10 L 0.25 0.40 M 0.10 0.25

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Rev. A/CZ 2010-03-15

MBT3946DW

Dual General Purpose Transistor NPN+PNP Silicon

www.taitroncomponents.com Page 14 of

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Email: [email protected] Http://www.taitroncomponents.com

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