conforma plasma doping system - applied materials · conforma™ plasma doping system b kth h t h l...

Conforma™ Plasma Doping SystemB kth h T h l f B ildiBreakthrough Technology for Building 3D Transistors

March 16, 2011

External UseSILICON SYSTEMS GROUP External UseSILICON SYSTEMS GROUP

Silicon Systems Group Overview

#1 in the Wafer Fab Equipment (WFE) and advanced(WFE) and advanced packaging markets

I 2011 t t WFE In 2011, expect to grow WFE market share for the 3rd consecutive year y

Growth fueled by new product innovations alignedinnovations aligned to technology inflections

External UseSILICON SYSTEMS GROUP2

Source: Gartner, April 2010

Innovations Enable Inflections

Conforma™ Doping

Centris™ Etch Avenir™ RF PVD Ni

Avila™ CVD

Tetra X™

Aera3™

Silvia™ Etch

Raider™ GT

DFinder™ Inspection

Avenir™ RF PVD Gate

Eterna™ FCVD

Mesa™ Etch InVia™ CVDCentinel™ PVD / ALDSiconi™ for Epi

Conforma Plasma Doping

UVision® 4 Brightfield Raider-S™ ECDReflexion® GT™CMPAstra™ DSA Anneal

External UseSILICON SYSTEMS GROUP

p gBreakthrough technology for building 3D transistors

3

New Device Architectures Requirea New Dimension in Dopinga New Dimension in Doping

Line-of-sight doping is notffi i t t dd th d fsufficient to address the needs of three-dimensional devices

NAND Vertical Bit Stack

DRAM Vertical Transistor

Logic Vertical TransistorBit StackTransistor Transistor (FinFET)


6F2 4F2

DRAM Density Scaling: Shrink to 4F2

6F26F 4F1F 1F

1F1F

WORDLINE

1F 2F

1F1F

WORDLINE

6F

1F

BIT

LIN

E

1F

BIT

LIN

E

BB

Where to place array transistor?Wh t l

2F x 2F = 4F2 Unit Cell3F x 2F = 6F2 Unit Cell

Array Transistor

Capacitor Contact Active Silicon

Bitline Contact

Where to place capacitor, capacitor contact, and bitline contact?

Example of state of the art 6F2 Architecture


4F2 cell requires significant change in unit cell layout

5

DRAM Density Scaling: 4F2

Vertical Gate/Wordline

Capacitor

1F 1F

1F1F

WORDLINE

NE /Wordline

2F

2FB

ITLI

N

BitlineJunction

BuriedBitline

>8:1 A/Rcal G

ate

Vertically integrated cell allows 4F2 layout

2F x 2F = 4F2 Unit Cell

>8:1 A/R

Bitline

Vert

iccell allows 4F layout Array transistor goes

vertical… Bitline and bitline

SiBitline

Junctionjunction are buried deep in substrate


Bitline junction formation requires high aspect ratio conformal doping

6

Logic Scaling: FinFET

Gate

Fin Pitch

Resist

HM-SiN

Poly-Si

Uniform doping of fin surface is critical for best transistor performance

Fin Pitch

Single Side ImplantDual Side Implant

Resist shadowing also presents challenges for uniformly doping fins

transistor performance However, this becomes

more and more challenging as fin pitch decreases

FinFET’s offer path for continued MOSFET scaling (Jg, Ion/Ioff, Vt variation), but traditional beamline technology will be challenged


), gy g Conformal plasma doping can overcome these challenges

7

Expanding Plasma Doping ApplicationsDRAM

3D Vertical Gate

FLASH3D Vertical

G tNew Conformal

Gate

LOGIC3D FinFET

LOGICM i l

LOGICM i l

New Conformal Plasma DopingTechnology

Material Modification

Material Modification

FLASHFloating Gate

FLASHFloating Gate Traditional Plasma

Doping DRAMRCAT

DRAMRCAT

DRAMRCAT

DRAMRCAT/BWL

DRAMRCAT / BWL

6X 5x 4x 3x 2x 1x / 3D

Technology

Device Node6X 5x 4x 3x 2x 1x / 3D

Conformal doping and material modification enable a whole new

Device Node


p ggeneration of devices at the 2x node and beyond

Note: RCAT = Recessed Channel Array Transistor, BWL = Buried Word Line

8

Applied Front End Products Market Share

Astra DSA

Conforma

Vantage RadianceSelective Epi

are

Vantage RadOxDPN Gate Stack

SiNgen

Mar

ket S

ha

Centura Epi

Centura RTP

M

L f l t k d f d t i ti d th

Centura Epi


Long, successful track record of product innovation and growth for Applied’s Front End Products

Source: Gartner 2011: RTP and Oxidation/Diffusion plus Epi

Introducing Applied’s Centura Conforma Plasma Doping SystemPlasma Doping System

Conforma Chamber

Conforma SystemApplied standard

Centura ACP & 5.4 FI

Conforma ChamberE-Chuck and HDP

Lower Chamber Body

Conforma LidAdvanced Dual Toroidal

RF Source

Conforma system utilizes production proven components on a

RF Source


y p p pproduction proven mainframe

10

Conforma Chamber Schematic

Plasma Sustained by RF Induction

ToroidalPlasma Source

In-Situ Chamber Clean & Season

Gas Inject

& Season

RF Wafer BiasControls Ion Energy

Temperature Controlled Plasma

Source & Chamber

Cathode

SheathWafer

Source & Chamber

Chamber

Centro-Symmetric Pumping

Chamber is HDP-CVD based with inherent production reliability coupled with


p y p10+ years of plasma expertise

11

Conformal (3D) Doping – SIMS Validation

Sequence SEM / Picture

Generate SiGenerate Si Fin Test Structures

C f l

Si

Conformal Doping + Anneal

Deposit Si

Si

SiDeposit Si Fill

Measure Doping

Si

SIMS Beam Width >> Fin Width

SIMS R lt f PH C f l PProfile with SIMS Si

Si SIMS Results from PH3 Conformal Process


High concentration, conformal doping demonstrated on fin sidewalls

12

Improving Retained Dose

Implant In-Situ Cap Anneal

Sequence

Results

In-Situ SiO2Cap 2 5

Arsenic Dose, NormalizedPost-Anneal

Cap

1.5

2

2.5

SiOxide cap on Si fin 0

0.5

1

Use of the Conforma system’s in-situ SiO2 cap can more than

Oxide cap on Si fin test structure

0No Cap With Cap


y 2 pdouble the retained dose after anneal

Note: Assumes use of cap oxide is compatible with integration scheme.

13

Process FlexibilityConforma: Switch from BF to B H

0 Hr

Hr

Hr

Hr

Hr

2 H

r

6 H

r

0 H

r

4 H

r

Conforma: Switch from BF3 to B2H6

T=0

+1

+2

+3

+4

+8

+12

+16

+20

+24

Conforma: Switch from BF3 to AsH3

T=0

+1 H

r

+2 H

r

+3 H

r

+4 H

r

+8 H

r

+12

Hr

+16

Hr

+20

Hr

+24

Hr

r r r r

Competitor: Switch from BF3 to AsH3(Wet Clean, Process Kit Change, Conditioning, etc.)

The Conforma system’s unique architecture allows rapid switching of

T=0

+1 H

r

+2 H

r

+3 H

r

+4 H

r

+8 H

r

+12

Hr

+16

Hr

+20

Hr

+24

Hr


y q p gdopants without any H/W changes or extensive conditioning

14

Customer Engagement and Position

Customer Conforma System(s)

F A Logic / Foundry

A

B

C Demo Engagement

A

B

g g

Mem

ory

B

C

D D

E Demo Engagement


Conforma system has good traction and is the only system in logic production today

conforma plasma doping system - applied materials · conforma™ plasma doping system b kth h t h l...

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