characteristics of inp particle s detectors structures
DESCRIPTION
Characteristics of InP Particle s Detectors Structures. B. Sopko, H. Kozak**, D. Nohavica**,D.Chren, T. Horažďovský, V. Sopko, Z. Kohout, M. Solar, S. Pospíšil*, K. Žďánský**, L. Pekárek** Department of Physics, Faculty of Mechanical Engineering, - PowerPoint PPT PresentationTRANSCRIPT
11.-13th Nov.2007 11´th Workshop R&D 50
Characteristics of InP Particles Detectors
Structures
B. Sopko, H. Kozak**, D. Nohavica**,D.Chren, T. Horažďovský, V. Sopko, Z. Kohout, M. Solar, S. Pospíšil*, K. Žďánský**, L.
Pekárek**
Department of Physics, Faculty of Mechanical Engineering, Czech Technical University, Technická 4, 166 29 Prague 6
*Institute of Applied and Experimental Physics IAEP, Physics, CTU, Horská 3a/22, 128 00 Praha 2
**Institute of Photonics and Electronics of the ASCR, Chaberská 57, 182 51 Praha 8
11.-13th Nov.2007 11´th Workshop R&D 50
Outline
motivation initial substrate structures technology results conclusions
11.-13th Nov.2007 11´th Workshop R&D 50
Motivation
e h e h
Si 14 2.33 1.12 11.7 3.62 ≈10 4 1400 480 >1 ≈1
Ge 32 5.33 0.67 16 2.96 50 3900 1900 >1 >1
CdTe 48,52 6.2 1.44 11 4.43 10 9 1100 100 3.3x10-3 2x10-4
GaAs 31,33 5.32 1.43 12.8 4.2 10 7 8000 400 8x10-5 4x10-6
InP 49,15 4.78 1.35 12.5 4.2 10 7 4600 150 4.8x10-6 <1.5x10-5
Mat
eria
l
Atom
ic n
umbe
r
Den
sity
g/c
m3
Band
-gap
eV
mt product
cm2/VD
iele
ctric
co
nsta
nt
Ioni
satio
n en
ergy
, eV
Res
istiv
ity
Ohm
.cm Mobility
cm2/V.s
Physical parameters of most used semiconductors at 300 K
11.-13th Nov.2007 11´th Workshop R&D 50
Initial substrate InP
SI InP : Fe , (100) n – type, binding energy 0,64 eV
11.-13th Nov.2007 11´th Workshop R&D 50
InP detector structures
Schottky junction
Epilayer junctionInP:Mg(Zn)
Metal
InP:Fe
Metal
InP:Fe
Metal
Metal
11.-13th Nov.2007 11´th Workshop R&D 50
Technology of Schottky barrier Contact metal
(6 nm Ni, 60 nm AuGe, 30 nm Ni, 200 nm Au) annealing in nitrogen, 2 min. at 400oC
Schottky junction 2 mm (same material not annealed)
InP:Fe
Metal
Metal
11.-13th Nov.2007 11´th Workshop R&D 50
Epilayer junction technology
Liquid phase epitaxy technique- epilayer of thickness 1 um
Dopant Mg: 2,1.1017cm-3
MESA etch in HBr:K2Cr2:H2O
Metal:InP:Mg(Zn)
Metal
InP:Fe
Metal
On P side:AuBe (25 nm)Cr (50 nm)Au (200 nm)
On N side: Ni (6 nm)AuGe (60 nm)Ni (30 nm)Au(200 nm)
11.-13th Nov.2007 11´th Workshop R&D 50
Detector on InP:Fe substrate
Schottky (1)
SI InP:FeCounting: 3600 sT=300 K, U=143 V, I=1520 nA
0
10
20
30
100 200 300 400 500 600 700
Channel
Co
un
ts p
er c
han
nel
Background noise
11.-13th Nov.2007 11´th Workshop R&D 50
Detector on InP:Fe substrate
Schottky (2)
SI InP:FeCounting: 300 sT=260 K
0
1000
2000
3000
100 250 400 550 700
Channel
Co
un
ts p
er
ch
an
nel
U=243 V, I=69 nA
U=291 V, I=87 nA
U=338 V, I=122 nA
Source 241 Am 5,48 MeV
11.-13th Nov.2007 11´th Workshop R&D 50
Detector on InP:Fe substrate epilayer junction (1) Mg, T=300 K
11.-13th Nov.2007 11´th Workshop R&D 50
Detector on InP:Fe substrate epilayer junction (2) Mg
SI InP:Fe/InP:MgCounting: 300 sT=220 K
0
200
400
600
800
1000
20 270 520 770 1020 1270
Channel
Co
un
ts p
er c
han
nel
U=19.89 V, I=0.6 nA
U=49.9 V, I=0.8 nA
U=99.9 V, I=1 nA
U=149.9 V, I=1.2 nA
U=199.8 V, I=1.5 nA
SI InP:Fe/InP:MgCounting: 300 sT=300 K
0
250
500
750
1000
1250
1500
25 75 125 175 225 275 325
Channel
Co
un
ts p
er c
han
nel
U=4.23 V, I=7 nA
U=8.79 V, I=11 nA
U=17.8 V, I=20 nA
U=34.94 V, I=46 nA
U=49.55 V, I=95 nA
U=56.8 V, I=104 nA
U=63.06 V, I=120 nA
11.-13th Nov.2007 11´th Workshop R&D 50
Detector on InP:Fe substrate epilayer junction (3) Mg, CCE
11.-13th Nov.2007 11´th Workshop R&D 50
Conclusion
technology of InP:Fe with epilayer InP:Mg was managed
detectors produced with InP:Mg epilayer have better characteristics than InP:Fe Schottky diodes at 22O K
InP:Mg epilayer structure operates at RT
11.-13th Nov.2007 11´th Workshop R&D 50
Near Future Investigation
standardization of horizontal structure and technology
application of Be dopant study of radiation hardness