chapter3 slides.pdf
TRANSCRIPT
Find VT0
N-channel MOSFET
Substrate Na=1E16 cm-3
Poly-Si gate Nd=2E20 cm-3
Tox=50 nm
Oxide interface fixed charge density Nox=4E10 cm-3
Full Scaling (Constant-Field Scaling)Quantity Before Scaling Full Scaling
Channel Length L 1/S
Channel Width W 1/S
Gate oxide thickness tox 1/S
Junction depth xj 1/S
Power supply voltage VDD 1/S
Threshold voltage VT0 1/S
Doping densities NA and ND S
Oxide capacitance Cox S
Drain current ID 1/S
Power dissipation P 1/S2
Power density P/area 1
Quantity Before Scaling Full Scaling Constant-V Scaling
Channel Length L 1/S 1/S
Channel Width W 1/S 1/S
Gate oxide thickness tox 1/S 1/S
Junction depth xj 1/S 1/S
Power supply voltage VDD 1/S 1
Threshold voltage VT0 1/S 1
Doping densities NA and ND S S
Oxide capacitance Cox S S
Drain current ID 1/S S
Power dissipation P 1/S2 S
Power density P/area 1 S3
Constant-Voltage Scaling
Full Scaling (Constant-Field Scaling)Quantity Before Scaling Full Scaling
Channel Length L 1/S
Channel Width W 1/S
Gate oxide thickness tox 1/S
Junction depth xj 1/S
Power supply voltage VDD 1/S
Threshold voltage VT0 1/S
Doping densities NA and ND S
Oxide capacitance Cox S
Drain current ID 1/S
Power dissipation P 1/S2
Power density P/area 1
Time delay tdelay
Capacitance ?Cox W L -> 1/S
DDIVC∆
Power = IDD VDD
Short Channel Effects
VT0 decreases
Why?How much?
Mobility degradation
Oxide breakdown becauseOf hot carrier effect