by dr. rudy schlaf semiconductor nanowires:...

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Intro to Nanotechnology Nanowires By Dr. Rudy Schlaf Semiconductor Nanowires: Motivation Patterning into sub 50 nm range is difficult with optical lithography. Self-organized growth of nanowires enables 2D confinement of carriers with large splitting of discrete energy states. Introduction of heterojunctions between semiconductors with different band gaps allows 3D confinement in sub 50 nm range. Room temperature single electron transistors are possible. Single photon devices are possible.

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Page 1: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

Semiconductor Nanowires: Motivation

• Patterning into sub 50 nm range is difficult withoptical lithography. Self-organized growth ofnanowires enables 2D confinement of carrierswith large splitting of discrete energy states.

• Introduction of heterojunctions betweensemiconductors with different band gaps allows3D confinement in sub 50 nm range.

• Room temperature single electron transistors arepossible.

• Single photon devices are possible.

Page 2: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

“Vapor-Liquid-Solid (VLS)” Growth of Si-Wire• Si substrate with Au

cluster is heated untilliquid Au-Si alloyforms

• Si-vapor/Si-precursorimpinges on surfaceand Si gets dissolvedin Au-Si liquidsupersaturating it

• Si precipitates atliquid/wafer interface

• Wire starts growingwhile lifting alloydrop up

• Wire assumes samecrystal structure assubstrate (epitaxialgrowth)

Questions to answer:(1) Why does the Si-precursor not deposit on areasurrounding the liquid alloy?(2) What is going on in the alloy droplet?(3) Why does the Si precipitate at all?

From

: A.P

.Lev

itt: W

hisk

er T

echn

olog

y, W

iley,

1970

Page 3: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

(1) Growth Rate Vs. Supersaturation/Sticking Coefficient• Plot shows growth rate J [layers per

sec] versus the supersaturation σ.• J~ σ∗sticking coefficient∗T-1/2

• σ = (p-po)/po; p > p0 needed forgrowth

• p=vapor pressure of precursor abovesurface

• po=vapor pressure of sample surface• Liquid has much higher growth rate

below σ1, i.e. careful adjustment ofprecursor pressure allows toexclusively absorb precursor atomsin the liquid.

•Clean liquid has highest stickingcoefficient because it has an “infinitenumber of edges/defects”•Imperfect crystal has medium stickingcoefficient•Perfect crystal has lowest stickingcoefficient due to absence of edges, holesetc…where impinging atoms can bind

p

poFrom: A.P.Levitt: Whisker Technology, Wiley,1970

Page 4: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

TL~850C

possible concentrations of Au-Si solution at TL

C1 C2

liquid and solid Si coexist

everything is eutectic solid

liquid and solid Au coexist

everything is liquid

•Au and Si do not exist in homogenous solution,only as eutectic solid (crystallites of pure Auand Si form a solid body)

(2,3) Au-Si Phase Diagram: Growth by Supersaturation• Au and Si form eutectic

mixture (i.e. the mixturecan have a lower meltingpoint than the purematerials.

• As the sample is heated,the Au particle on Si-wafer melts and due to“infinite” Si supply asolution of concentrationC2 develops

• As more Si is suppliedfrom gas phase, thesolution becomessupersaturated and excessSi precipitates out as solidSi particles whicheventually bind to the Sisurface under the Audroplet

Page 5: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

Si-Whisker Growth

a) Piece of Au foil lying on Sisubstrate.

b) Au-Si alloy droplet at1050C.

c) After 10 min of growth fromSiCl4 precursor. Contactangle considerably increaseswith the consequence of areduction of the dropletdiameter.

d) After 30 min of growth:Contact angle has stabilizedand whisker has grown.

From: A.P.Levitt: Whisker Technology, Wiley,1970

Page 6: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

Life is Not Easy: VLS Growth Artifacts

• Top: Temperature gradient onwafer: Alloy droplet originallyat A migrates towards highertemp. B.

• Left: Too much precursor vaporresults in breakup of originaldroplet, resulting in smallerwhiskers.

• Right: Sudden drop intemperature from 1000C to600C for 30 sec and subsequentre-heating to 950C resulted inrapid formation of small Sicrystals with randomorientation serving as seeds forsmall whiskers.

Page 7: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

Size, Shape and Position Controlled GaAs Nanowires

From: B.J. Ohlson et al., Appl.Phys.Lett. 79(20),pp.3335,2001

GaAs(111)A-surface

(111)B-surface

• Size selected Au particles in N2stream are deposited onGaAs(111)B surface inside aglove box.

• AFM inside glove box is used topush the Au particles intoposition.

• Growth occurs at Au particlelocation using VLS mechanism.

• Precursors: triethylgallium (TEG)and tertiarybutylarsine (TBA).TBA is thermally precracked torelease As2 molecules.

Page 8: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

Small Particle Mobility Analyzer• Selects particles of

certain mobility(mass) fromdistribution

• High voltage isapplied betweencenter rod and outerwall

• Particles (aerosol,red) enter main gas(air or N2) stream(blue)and getelectrostaticallyattracted to centerrod.

• Only particles ofcertain mass enterexit hole to“sampling outlet”

• A stream of mono-disperse particles isgenerated

From

: E.O

.Knu

dson

et a

l., J.

Aer

osol

Sci

.,6,p

p.44

3-45

1,19

75

Page 9: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

GaAs Nanowires Growth Results• (top): Au particles moved into growth

positions(a), with grown GaAs wires, topview(b), side view(c).

• (bottom): Randomly distributed wires (b),TEM image of wire end (c); Differentcrystal structures and defects are visible(W=wurzite, Z=zinc blende, SF=stackingfault,T=twin plane). Cap at the end: Auparticle.

From: B.J. Ohlson et al., Appl.Phys.Lett. 79(20),pp.3335,2001

Page 10: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

InAs/InP Heterostructure Nanowires

• Same VLS-procedure as for purewires using trimethyl In,tertiarybutylarsine, andtertiarybutylphosphine asprecursors.

• 40 nm width.• Alternating between arsine and

phosphine precursors producesalternating InP and InAs growthregions.

• TEM shows atomically abruptinterfaces.

From

: M.T

.Bjö

rk e

t al.

App

l.Phy

s.Let

t. 80

(6),1

058,

2002

Page 11: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

InAs/InP Devices and Their Characterization

From: M.T.Björk et al. Appl.Phys.Lett. 80(6),1058,2002

• E-beam litho was used to makecontacts for electricalcharacterization.

• Wires were dispersed on oxidizedSi wafer (100 nm). Then 20 nmNi/70 nm Au electrodes werepatterned across the ends of thewire.

• Two kinds of wires werefabricated: (1) Pure InAsreferences and (2) InAs with one80 nm long InP section in themiddle.

• Graph shows current through pureInAs wire (at 4.2K) depending ona bias applied to the back side ofthe Si wafer(=gate). Linear curvesdemonstrate Ohmic behavior.

• Conductivity changes strongly dueto changing carrier density ofwire.

Page 12: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

I-V Characteristic of InAs Wire with InP Barriera) I-V curves through pure InAs and

InAs/InP wire in comparison.Strong current increases are aresult from the barrier heightreduction due to the applied bias.

b) Current depends on temperature:I=const*T2*exp[-q*ΦB/kT]. Plotshows that ΦB varies dependingon the applied bias (voltages seec). Note In(I/T2) vs. 1/T plot; ΦBis extracted from slope.

c) Barrier height vs.bias voltage.Extrapolation to zero bias yields0.6eV barrier height, which isclose to the bulk heterojunctionvalue.

d) Band line-up of InAs/InPheterojunction; ~0.6 eVconduction band barriers.

pure

with InP

From: M.T.Björk et al. Appl.Phys.Lett. 80(6),1058,2002

Page 13: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

Resonant Tunneling InAs/InP Device

From: M.T. Björk et al. Appli.Phys.Lett. 81(23), pp.4458-61,2002

a) 5 nm wide InP barriers inInAs. 15 nm wide InAsquantum dot in between.

b) Band diagram withelectronic states. InAs is n-type; Fermi energy liesabove E1, i.e. E1 is the onlyoccupied state in theemitter. On the dot thestates are split due to thedifferent z-direction andtransversal quantization.The smallest energy barrieris E1

z.c) I-V curve through wire.

Current is zero below 70mV applied bias. Sharppeak corresponds totunneling through E1

z.Insert shows repeatmeasurements.

Page 14: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

Quantum Dot Devices Schematica) (left) Confinement of

electrons in potential wellresults in discrete states.(right) Electron can tunnelthrough potentiaal barriers.Their energy is unaffected,only the amplitude of thewave function changes.

b) Heterojunctions betweenmaterials having differentband gaps result inpotential barriers. This canbe used to prepare quantumdot devices.

c) When a SD bias is appliedelectrons tunnel throughsingle states on the dot asthey become available.Current spikes result.

From: L.Samuelson, Materials Today 6(10), pp.22-31,2003

Page 15: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

Effects of 80 nm Long InAs Quantum Dot• Longer InAs section in wire

results in more closely spacedenergy states in the dot, i.e.many more peaks are beingseen in I/VG curve.

• (a) shows contacted wirebetween EBL contacts.

• (b) I/VSD curves across thewire. Depending on biasapplied to the wafer backside(gate) voltage VG different“wiggles” (representing energystates that are being tunneledthrough) appear.

• (c) I/VG curves at VSD=0.5mV. Note the pA scale.

From: C.Thelander et al. Appl.Phys.Lett. 83(10),pp.2052-55,2003

Page 16: By Dr. Rudy Schlaf Semiconductor Nanowires: Motivationrsl.eng.usf.edu/Documents/PDF/NanowireSlides.pdf · By Dr. Rudy Schlaf Resonant Tunneling InAs/InP Device From: M.T. Björk et

Intro to Nanotechnology NanowiresBy Dr. Rudy Schlaf

Effects of 80 nm Long InAs Quantum Dot (2)

• “Stability Plot” showsI/VSD curves for whole VGrange. Gray scalecorresponds to absolutecurrent (black is zero,white ±1 nA).

• The dotted linescorrespond to the twocurves in the graph.

• Top plot: data• Bottom plot: simulation

VG(V)

From

: C.T

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et a

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p.20

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