application of heavy charged particle spectrometry
DESCRIPTION
Application of heavy charged particle spectrometry. 1) Identification of superheavy elements by means of alpha decay sequence 2) Study of hot and dense nuclear matter by means of charged particle spectrometry. Heavy ion collision with ultrarelativistic energy. - PowerPoint PPT PresentationTRANSCRIPT
Application of heavy charged particle spectrometry
1) Identification of superheavy elements by means of alpha decay sequence
2) Study of hot and dense nuclear matter by means of charged particle spectrometry
Table of isotopes in the range of superheavy elementsHeavy ion collision with ultrarelativistic energy
Problem very small cross-sections production only single nuclei ndash necessary unambiguous identification
Energy 1) sufficient for overcoming of Coulomb barrier 2) as small as possible to obtain ldquorelatively stableldquo compound nucleus
Decay of alpha decay sequence rarr alpha particles contain information about energy differences between following nuclei
Production possibilities 1) Neutron capture ndash up to Z = 100 (earlier decay then neutron capture) 2) Reaction of light nucleus on heavy target 3) bdquoColdldquo fusion of heavy nucleus ndash projectile A ~ 40 EEX ~ 10 MeV 4) bdquoHotldquo fusion of heavy nucleus ndash usage of 48Ca (Z = 20) EEX ~ 40 MeV
Production of superheavy elements
Drop model 1) stability decreases with increasing proton number 2) excess of neutrons increases with increasing proton number
Existence of bdquomore stableldquo superheavy elements made possible by existence of magic numbers - shell structure harr shell model
Competition of volume energy (strong nuclear interaction) and coulomb energy
Stability island ndash Z = 114 and N = 184 ndash depends on potential form significant uncertainty
Detection of superheavy elements at GSI Darmstadt
Identification of single cases of superheavy element production and decay
1) Capture of all alpha from decay sequence and determination of their energy2) Identification of fission
ptp
pCM v
mm
mv
Velocity filter
Electric deflectors and dipole magnets
Fel = qE Fmag = qvB
Choice of incurred compound nucleus
Right choice E a B for vCM is FTOT = Fel ndash Fmag = 0
dipole magnets
electric deflectors
TOF
rotatedtarget
quadrupole magnets
Stopping of beam
svazek
SHIP device
Elements 107 ndash 112 device SHIP at GSI Darmstadt fusion reaction on Pb Bi nuclei usage of separation separation of compound nucleus implantation to active volume of detector and identification by means of alpha decay sequences
Rotated target (Pb Bi) low thaw pointintensive beam ndash 1012 nucleis
TOF spectrometer
Suppression of residual background
Start ndash transition detectors thin carbon foils (electron production) and mikrochannel plates
Stop ndash 16 silicon strip detectors ΔE = 14 keV for alpha from 241Am
Efficiency 998 resolution 700 ps
Coverage 80 of 2π
HPGe detectors ndash photons from deexcitation of excited nuclei
transition detectory
stop detector(silicon)
Cross sections až ~ pb single nucleus per tens days
Very intensive beams during many months
107 Bh Bohrium108 Hs Hassium109 Mt Meitnerium110 Dm Darmstadtiumu111 Rg Roentgenium112 Cp Copernicium
Fusion per low energies
Results from GSI confirmed also by Japanese laboratory RIKEN
First identified decays of named element with present second highest Z
Further ndash fusion by means of higher energies
(112 113 114 115 116 117 118)Problem ndash sequence ends by unknown isotopes rather long decay time (problem with identification by means of coincidences) Year 2006 ndash join ndash looks OK
Reaction 48Ca + 244Pu rarr Z = 114 A = 292
Excitation function for C+Pu reaction
Map of superheavy elements
Cold fusion
Hot fusion Stability island
Neutron number
Pro
ton
nu
mb
er
108 Hassium ndash one from last element chemically studied
Oxid of ruthenium RuO4
Oxid of osmium OsO4
Oxid of hassium HsO4
Chemical analysis of single atoms
Nucleus decays early than new is produced
Study of volatility rarr oxides of VIII group are very volatile
Known isotopes of hassium
First produced hassium nucleus
Production of more stable Hs isotopes
Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption
Hs with A ~ 288 will be maybe very stable
Nucleon Decaynumber halftime
only elements in this column can be octavalent
Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]
Study of hot and dense nuclear matter by means of charged particles production
Effort to build 4π detectors of charged particles
Example of FOPI spectrometer at GSI Darmstadt
Determination of nuclear matter temperature ndash spectrum
Scheme of FOPI spectrometer
Display of event detected by FOPI spectrometer
Spectrometer of charged particles FOPI
Relativistic heavy ion collisionsrarrBig number of produced charged particles
Determination of pressure ndash particle collective flow
Determination of nuclear matterequation of state
2y
2x
2222T ppcmcm Introduction of transfer mass mT
and rapidity y
z
z
pcE
pcE
ln2
1y and then
cos1
cos1ln
2
1
cosmvmc
cosmvmcln
2
1y
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)
Two Arm Photon Spectrometer
Detection of gamma neutrons and charged particles
384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles
cooperation with TOF plastic wall
- collision characteristic
Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)
Collective flow of nucleons
N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)
A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0
Bounce off particles to the Reaction plane
Squeeze out of particles perpendicular to reaction plane
Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models
Dependence of collective flows on rapidity (origin of nukleons)
Target region Collision region Target region Projectile region
Application at material research - scattering channeling ion reaction
Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV
Usage ions for modification and studies of structure of surface layers of solid materials
Different types of silicon semiconductor detectors of charged particles
Usage of ion accelerators for relatively low energies in the range from keV up to MeV
Spectrometers of charged nuclei ndash often semiconductor silicon detectors
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
Problem very small cross-sections production only single nuclei ndash necessary unambiguous identification
Energy 1) sufficient for overcoming of Coulomb barrier 2) as small as possible to obtain ldquorelatively stableldquo compound nucleus
Decay of alpha decay sequence rarr alpha particles contain information about energy differences between following nuclei
Production possibilities 1) Neutron capture ndash up to Z = 100 (earlier decay then neutron capture) 2) Reaction of light nucleus on heavy target 3) bdquoColdldquo fusion of heavy nucleus ndash projectile A ~ 40 EEX ~ 10 MeV 4) bdquoHotldquo fusion of heavy nucleus ndash usage of 48Ca (Z = 20) EEX ~ 40 MeV
Production of superheavy elements
Drop model 1) stability decreases with increasing proton number 2) excess of neutrons increases with increasing proton number
Existence of bdquomore stableldquo superheavy elements made possible by existence of magic numbers - shell structure harr shell model
Competition of volume energy (strong nuclear interaction) and coulomb energy
Stability island ndash Z = 114 and N = 184 ndash depends on potential form significant uncertainty
Detection of superheavy elements at GSI Darmstadt
Identification of single cases of superheavy element production and decay
1) Capture of all alpha from decay sequence and determination of their energy2) Identification of fission
ptp
pCM v
mm
mv
Velocity filter
Electric deflectors and dipole magnets
Fel = qE Fmag = qvB
Choice of incurred compound nucleus
Right choice E a B for vCM is FTOT = Fel ndash Fmag = 0
dipole magnets
electric deflectors
TOF
rotatedtarget
quadrupole magnets
Stopping of beam
svazek
SHIP device
Elements 107 ndash 112 device SHIP at GSI Darmstadt fusion reaction on Pb Bi nuclei usage of separation separation of compound nucleus implantation to active volume of detector and identification by means of alpha decay sequences
Rotated target (Pb Bi) low thaw pointintensive beam ndash 1012 nucleis
TOF spectrometer
Suppression of residual background
Start ndash transition detectors thin carbon foils (electron production) and mikrochannel plates
Stop ndash 16 silicon strip detectors ΔE = 14 keV for alpha from 241Am
Efficiency 998 resolution 700 ps
Coverage 80 of 2π
HPGe detectors ndash photons from deexcitation of excited nuclei
transition detectory
stop detector(silicon)
Cross sections až ~ pb single nucleus per tens days
Very intensive beams during many months
107 Bh Bohrium108 Hs Hassium109 Mt Meitnerium110 Dm Darmstadtiumu111 Rg Roentgenium112 Cp Copernicium
Fusion per low energies
Results from GSI confirmed also by Japanese laboratory RIKEN
First identified decays of named element with present second highest Z
Further ndash fusion by means of higher energies
(112 113 114 115 116 117 118)Problem ndash sequence ends by unknown isotopes rather long decay time (problem with identification by means of coincidences) Year 2006 ndash join ndash looks OK
Reaction 48Ca + 244Pu rarr Z = 114 A = 292
Excitation function for C+Pu reaction
Map of superheavy elements
Cold fusion
Hot fusion Stability island
Neutron number
Pro
ton
nu
mb
er
108 Hassium ndash one from last element chemically studied
Oxid of ruthenium RuO4
Oxid of osmium OsO4
Oxid of hassium HsO4
Chemical analysis of single atoms
Nucleus decays early than new is produced
Study of volatility rarr oxides of VIII group are very volatile
Known isotopes of hassium
First produced hassium nucleus
Production of more stable Hs isotopes
Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption
Hs with A ~ 288 will be maybe very stable
Nucleon Decaynumber halftime
only elements in this column can be octavalent
Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]
Study of hot and dense nuclear matter by means of charged particles production
Effort to build 4π detectors of charged particles
Example of FOPI spectrometer at GSI Darmstadt
Determination of nuclear matter temperature ndash spectrum
Scheme of FOPI spectrometer
Display of event detected by FOPI spectrometer
Spectrometer of charged particles FOPI
Relativistic heavy ion collisionsrarrBig number of produced charged particles
Determination of pressure ndash particle collective flow
Determination of nuclear matterequation of state
2y
2x
2222T ppcmcm Introduction of transfer mass mT
and rapidity y
z
z
pcE
pcE
ln2
1y and then
cos1
cos1ln
2
1
cosmvmc
cosmvmcln
2
1y
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)
Two Arm Photon Spectrometer
Detection of gamma neutrons and charged particles
384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles
cooperation with TOF plastic wall
- collision characteristic
Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)
Collective flow of nucleons
N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)
A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0
Bounce off particles to the Reaction plane
Squeeze out of particles perpendicular to reaction plane
Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models
Dependence of collective flows on rapidity (origin of nukleons)
Target region Collision region Target region Projectile region
Application at material research - scattering channeling ion reaction
Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV
Usage ions for modification and studies of structure of surface layers of solid materials
Different types of silicon semiconductor detectors of charged particles
Usage of ion accelerators for relatively low energies in the range from keV up to MeV
Spectrometers of charged nuclei ndash often semiconductor silicon detectors
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
Detection of superheavy elements at GSI Darmstadt
Identification of single cases of superheavy element production and decay
1) Capture of all alpha from decay sequence and determination of their energy2) Identification of fission
ptp
pCM v
mm
mv
Velocity filter
Electric deflectors and dipole magnets
Fel = qE Fmag = qvB
Choice of incurred compound nucleus
Right choice E a B for vCM is FTOT = Fel ndash Fmag = 0
dipole magnets
electric deflectors
TOF
rotatedtarget
quadrupole magnets
Stopping of beam
svazek
SHIP device
Elements 107 ndash 112 device SHIP at GSI Darmstadt fusion reaction on Pb Bi nuclei usage of separation separation of compound nucleus implantation to active volume of detector and identification by means of alpha decay sequences
Rotated target (Pb Bi) low thaw pointintensive beam ndash 1012 nucleis
TOF spectrometer
Suppression of residual background
Start ndash transition detectors thin carbon foils (electron production) and mikrochannel plates
Stop ndash 16 silicon strip detectors ΔE = 14 keV for alpha from 241Am
Efficiency 998 resolution 700 ps
Coverage 80 of 2π
HPGe detectors ndash photons from deexcitation of excited nuclei
transition detectory
stop detector(silicon)
Cross sections až ~ pb single nucleus per tens days
Very intensive beams during many months
107 Bh Bohrium108 Hs Hassium109 Mt Meitnerium110 Dm Darmstadtiumu111 Rg Roentgenium112 Cp Copernicium
Fusion per low energies
Results from GSI confirmed also by Japanese laboratory RIKEN
First identified decays of named element with present second highest Z
Further ndash fusion by means of higher energies
(112 113 114 115 116 117 118)Problem ndash sequence ends by unknown isotopes rather long decay time (problem with identification by means of coincidences) Year 2006 ndash join ndash looks OK
Reaction 48Ca + 244Pu rarr Z = 114 A = 292
Excitation function for C+Pu reaction
Map of superheavy elements
Cold fusion
Hot fusion Stability island
Neutron number
Pro
ton
nu
mb
er
108 Hassium ndash one from last element chemically studied
Oxid of ruthenium RuO4
Oxid of osmium OsO4
Oxid of hassium HsO4
Chemical analysis of single atoms
Nucleus decays early than new is produced
Study of volatility rarr oxides of VIII group are very volatile
Known isotopes of hassium
First produced hassium nucleus
Production of more stable Hs isotopes
Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption
Hs with A ~ 288 will be maybe very stable
Nucleon Decaynumber halftime
only elements in this column can be octavalent
Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]
Study of hot and dense nuclear matter by means of charged particles production
Effort to build 4π detectors of charged particles
Example of FOPI spectrometer at GSI Darmstadt
Determination of nuclear matter temperature ndash spectrum
Scheme of FOPI spectrometer
Display of event detected by FOPI spectrometer
Spectrometer of charged particles FOPI
Relativistic heavy ion collisionsrarrBig number of produced charged particles
Determination of pressure ndash particle collective flow
Determination of nuclear matterequation of state
2y
2x
2222T ppcmcm Introduction of transfer mass mT
and rapidity y
z
z
pcE
pcE
ln2
1y and then
cos1
cos1ln
2
1
cosmvmc
cosmvmcln
2
1y
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)
Two Arm Photon Spectrometer
Detection of gamma neutrons and charged particles
384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles
cooperation with TOF plastic wall
- collision characteristic
Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)
Collective flow of nucleons
N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)
A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0
Bounce off particles to the Reaction plane
Squeeze out of particles perpendicular to reaction plane
Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models
Dependence of collective flows on rapidity (origin of nukleons)
Target region Collision region Target region Projectile region
Application at material research - scattering channeling ion reaction
Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV
Usage ions for modification and studies of structure of surface layers of solid materials
Different types of silicon semiconductor detectors of charged particles
Usage of ion accelerators for relatively low energies in the range from keV up to MeV
Spectrometers of charged nuclei ndash often semiconductor silicon detectors
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
TOF spectrometer
Suppression of residual background
Start ndash transition detectors thin carbon foils (electron production) and mikrochannel plates
Stop ndash 16 silicon strip detectors ΔE = 14 keV for alpha from 241Am
Efficiency 998 resolution 700 ps
Coverage 80 of 2π
HPGe detectors ndash photons from deexcitation of excited nuclei
transition detectory
stop detector(silicon)
Cross sections až ~ pb single nucleus per tens days
Very intensive beams during many months
107 Bh Bohrium108 Hs Hassium109 Mt Meitnerium110 Dm Darmstadtiumu111 Rg Roentgenium112 Cp Copernicium
Fusion per low energies
Results from GSI confirmed also by Japanese laboratory RIKEN
First identified decays of named element with present second highest Z
Further ndash fusion by means of higher energies
(112 113 114 115 116 117 118)Problem ndash sequence ends by unknown isotopes rather long decay time (problem with identification by means of coincidences) Year 2006 ndash join ndash looks OK
Reaction 48Ca + 244Pu rarr Z = 114 A = 292
Excitation function for C+Pu reaction
Map of superheavy elements
Cold fusion
Hot fusion Stability island
Neutron number
Pro
ton
nu
mb
er
108 Hassium ndash one from last element chemically studied
Oxid of ruthenium RuO4
Oxid of osmium OsO4
Oxid of hassium HsO4
Chemical analysis of single atoms
Nucleus decays early than new is produced
Study of volatility rarr oxides of VIII group are very volatile
Known isotopes of hassium
First produced hassium nucleus
Production of more stable Hs isotopes
Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption
Hs with A ~ 288 will be maybe very stable
Nucleon Decaynumber halftime
only elements in this column can be octavalent
Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]
Study of hot and dense nuclear matter by means of charged particles production
Effort to build 4π detectors of charged particles
Example of FOPI spectrometer at GSI Darmstadt
Determination of nuclear matter temperature ndash spectrum
Scheme of FOPI spectrometer
Display of event detected by FOPI spectrometer
Spectrometer of charged particles FOPI
Relativistic heavy ion collisionsrarrBig number of produced charged particles
Determination of pressure ndash particle collective flow
Determination of nuclear matterequation of state
2y
2x
2222T ppcmcm Introduction of transfer mass mT
and rapidity y
z
z
pcE
pcE
ln2
1y and then
cos1
cos1ln
2
1
cosmvmc
cosmvmcln
2
1y
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)
Two Arm Photon Spectrometer
Detection of gamma neutrons and charged particles
384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles
cooperation with TOF plastic wall
- collision characteristic
Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)
Collective flow of nucleons
N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)
A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0
Bounce off particles to the Reaction plane
Squeeze out of particles perpendicular to reaction plane
Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models
Dependence of collective flows on rapidity (origin of nukleons)
Target region Collision region Target region Projectile region
Application at material research - scattering channeling ion reaction
Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV
Usage ions for modification and studies of structure of surface layers of solid materials
Different types of silicon semiconductor detectors of charged particles
Usage of ion accelerators for relatively low energies in the range from keV up to MeV
Spectrometers of charged nuclei ndash often semiconductor silicon detectors
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
107 Bh Bohrium108 Hs Hassium109 Mt Meitnerium110 Dm Darmstadtiumu111 Rg Roentgenium112 Cp Copernicium
Fusion per low energies
Results from GSI confirmed also by Japanese laboratory RIKEN
First identified decays of named element with present second highest Z
Further ndash fusion by means of higher energies
(112 113 114 115 116 117 118)Problem ndash sequence ends by unknown isotopes rather long decay time (problem with identification by means of coincidences) Year 2006 ndash join ndash looks OK
Reaction 48Ca + 244Pu rarr Z = 114 A = 292
Excitation function for C+Pu reaction
Map of superheavy elements
Cold fusion
Hot fusion Stability island
Neutron number
Pro
ton
nu
mb
er
108 Hassium ndash one from last element chemically studied
Oxid of ruthenium RuO4
Oxid of osmium OsO4
Oxid of hassium HsO4
Chemical analysis of single atoms
Nucleus decays early than new is produced
Study of volatility rarr oxides of VIII group are very volatile
Known isotopes of hassium
First produced hassium nucleus
Production of more stable Hs isotopes
Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption
Hs with A ~ 288 will be maybe very stable
Nucleon Decaynumber halftime
only elements in this column can be octavalent
Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]
Study of hot and dense nuclear matter by means of charged particles production
Effort to build 4π detectors of charged particles
Example of FOPI spectrometer at GSI Darmstadt
Determination of nuclear matter temperature ndash spectrum
Scheme of FOPI spectrometer
Display of event detected by FOPI spectrometer
Spectrometer of charged particles FOPI
Relativistic heavy ion collisionsrarrBig number of produced charged particles
Determination of pressure ndash particle collective flow
Determination of nuclear matterequation of state
2y
2x
2222T ppcmcm Introduction of transfer mass mT
and rapidity y
z
z
pcE
pcE
ln2
1y and then
cos1
cos1ln
2
1
cosmvmc
cosmvmcln
2
1y
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)
Two Arm Photon Spectrometer
Detection of gamma neutrons and charged particles
384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles
cooperation with TOF plastic wall
- collision characteristic
Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)
Collective flow of nucleons
N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)
A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0
Bounce off particles to the Reaction plane
Squeeze out of particles perpendicular to reaction plane
Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models
Dependence of collective flows on rapidity (origin of nukleons)
Target region Collision region Target region Projectile region
Application at material research - scattering channeling ion reaction
Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV
Usage ions for modification and studies of structure of surface layers of solid materials
Different types of silicon semiconductor detectors of charged particles
Usage of ion accelerators for relatively low energies in the range from keV up to MeV
Spectrometers of charged nuclei ndash often semiconductor silicon detectors
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
Map of superheavy elements
Cold fusion
Hot fusion Stability island
Neutron number
Pro
ton
nu
mb
er
108 Hassium ndash one from last element chemically studied
Oxid of ruthenium RuO4
Oxid of osmium OsO4
Oxid of hassium HsO4
Chemical analysis of single atoms
Nucleus decays early than new is produced
Study of volatility rarr oxides of VIII group are very volatile
Known isotopes of hassium
First produced hassium nucleus
Production of more stable Hs isotopes
Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption
Hs with A ~ 288 will be maybe very stable
Nucleon Decaynumber halftime
only elements in this column can be octavalent
Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]
Study of hot and dense nuclear matter by means of charged particles production
Effort to build 4π detectors of charged particles
Example of FOPI spectrometer at GSI Darmstadt
Determination of nuclear matter temperature ndash spectrum
Scheme of FOPI spectrometer
Display of event detected by FOPI spectrometer
Spectrometer of charged particles FOPI
Relativistic heavy ion collisionsrarrBig number of produced charged particles
Determination of pressure ndash particle collective flow
Determination of nuclear matterequation of state
2y
2x
2222T ppcmcm Introduction of transfer mass mT
and rapidity y
z
z
pcE
pcE
ln2
1y and then
cos1
cos1ln
2
1
cosmvmc
cosmvmcln
2
1y
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)
Two Arm Photon Spectrometer
Detection of gamma neutrons and charged particles
384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles
cooperation with TOF plastic wall
- collision characteristic
Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)
Collective flow of nucleons
N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)
A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0
Bounce off particles to the Reaction plane
Squeeze out of particles perpendicular to reaction plane
Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models
Dependence of collective flows on rapidity (origin of nukleons)
Target region Collision region Target region Projectile region
Application at material research - scattering channeling ion reaction
Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV
Usage ions for modification and studies of structure of surface layers of solid materials
Different types of silicon semiconductor detectors of charged particles
Usage of ion accelerators for relatively low energies in the range from keV up to MeV
Spectrometers of charged nuclei ndash often semiconductor silicon detectors
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
108 Hassium ndash one from last element chemically studied
Oxid of ruthenium RuO4
Oxid of osmium OsO4
Oxid of hassium HsO4
Chemical analysis of single atoms
Nucleus decays early than new is produced
Study of volatility rarr oxides of VIII group are very volatile
Known isotopes of hassium
First produced hassium nucleus
Production of more stable Hs isotopes
Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption
Hs with A ~ 288 will be maybe very stable
Nucleon Decaynumber halftime
only elements in this column can be octavalent
Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]
Study of hot and dense nuclear matter by means of charged particles production
Effort to build 4π detectors of charged particles
Example of FOPI spectrometer at GSI Darmstadt
Determination of nuclear matter temperature ndash spectrum
Scheme of FOPI spectrometer
Display of event detected by FOPI spectrometer
Spectrometer of charged particles FOPI
Relativistic heavy ion collisionsrarrBig number of produced charged particles
Determination of pressure ndash particle collective flow
Determination of nuclear matterequation of state
2y
2x
2222T ppcmcm Introduction of transfer mass mT
and rapidity y
z
z
pcE
pcE
ln2
1y and then
cos1
cos1ln
2
1
cosmvmc
cosmvmcln
2
1y
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)
Two Arm Photon Spectrometer
Detection of gamma neutrons and charged particles
384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles
cooperation with TOF plastic wall
- collision characteristic
Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)
Collective flow of nucleons
N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)
A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0
Bounce off particles to the Reaction plane
Squeeze out of particles perpendicular to reaction plane
Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models
Dependence of collective flows on rapidity (origin of nukleons)
Target region Collision region Target region Projectile region
Application at material research - scattering channeling ion reaction
Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV
Usage ions for modification and studies of structure of surface layers of solid materials
Different types of silicon semiconductor detectors of charged particles
Usage of ion accelerators for relatively low energies in the range from keV up to MeV
Spectrometers of charged nuclei ndash often semiconductor silicon detectors
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
Study of hot and dense nuclear matter by means of charged particles production
Effort to build 4π detectors of charged particles
Example of FOPI spectrometer at GSI Darmstadt
Determination of nuclear matter temperature ndash spectrum
Scheme of FOPI spectrometer
Display of event detected by FOPI spectrometer
Spectrometer of charged particles FOPI
Relativistic heavy ion collisionsrarrBig number of produced charged particles
Determination of pressure ndash particle collective flow
Determination of nuclear matterequation of state
2y
2x
2222T ppcmcm Introduction of transfer mass mT
and rapidity y
z
z
pcE
pcE
ln2
1y and then
cos1
cos1ln
2
1
cosmvmc
cosmvmcln
2
1y
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)
Two Arm Photon Spectrometer
Detection of gamma neutrons and charged particles
384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles
cooperation with TOF plastic wall
- collision characteristic
Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)
Collective flow of nucleons
N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)
A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0
Bounce off particles to the Reaction plane
Squeeze out of particles perpendicular to reaction plane
Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models
Dependence of collective flows on rapidity (origin of nukleons)
Target region Collision region Target region Projectile region
Application at material research - scattering channeling ion reaction
Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV
Usage ions for modification and studies of structure of surface layers of solid materials
Different types of silicon semiconductor detectors of charged particles
Usage of ion accelerators for relatively low energies in the range from keV up to MeV
Spectrometers of charged nuclei ndash often semiconductor silicon detectors
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
2y
2x
2222T ppcmcm Introduction of transfer mass mT
and rapidity y
z
z
pcE
pcE
ln2
1y and then
cos1
cos1ln
2
1
cosmvmc
cosmvmcln
2
1y
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)
Two Arm Photon Spectrometer
Detection of gamma neutrons and charged particles
384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles
cooperation with TOF plastic wall
- collision characteristic
Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)
Collective flow of nucleons
N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)
A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0
Bounce off particles to the Reaction plane
Squeeze out of particles perpendicular to reaction plane
Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models
Dependence of collective flows on rapidity (origin of nukleons)
Target region Collision region Target region Projectile region
Application at material research - scattering channeling ion reaction
Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV
Usage ions for modification and studies of structure of surface layers of solid materials
Different types of silicon semiconductor detectors of charged particles
Usage of ion accelerators for relatively low energies in the range from keV up to MeV
Spectrometers of charged nuclei ndash often semiconductor silicon detectors
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
Two Arm Photon Spectrometer
Detection of gamma neutrons and charged particles
384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles
cooperation with TOF plastic wall
- collision characteristic
Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)
Collective flow of nucleons
N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)
A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0
Bounce off particles to the Reaction plane
Squeeze out of particles perpendicular to reaction plane
Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models
Dependence of collective flows on rapidity (origin of nukleons)
Target region Collision region Target region Projectile region
Application at material research - scattering channeling ion reaction
Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV
Usage ions for modification and studies of structure of surface layers of solid materials
Different types of silicon semiconductor detectors of charged particles
Usage of ion accelerators for relatively low energies in the range from keV up to MeV
Spectrometers of charged nuclei ndash often semiconductor silicon detectors
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
Collective flow of nucleons
N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))
Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity
Target region YREL -1 Collision region YREL 0 Projectile region YREL +1
A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)
A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0
Bounce off particles to the Reaction plane
Squeeze out of particles perpendicular to reaction plane
Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models
Dependence of collective flows on rapidity (origin of nukleons)
Target region Collision region Target region Projectile region
Application at material research - scattering channeling ion reaction
Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV
Usage ions for modification and studies of structure of surface layers of solid materials
Different types of silicon semiconductor detectors of charged particles
Usage of ion accelerators for relatively low energies in the range from keV up to MeV
Spectrometers of charged nuclei ndash often semiconductor silicon detectors
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
Bounce off particles to the Reaction plane
Squeeze out of particles perpendicular to reaction plane
Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models
Dependence of collective flows on rapidity (origin of nukleons)
Target region Collision region Target region Projectile region
Application at material research - scattering channeling ion reaction
Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV
Usage ions for modification and studies of structure of surface layers of solid materials
Different types of silicon semiconductor detectors of charged particles
Usage of ion accelerators for relatively low energies in the range from keV up to MeV
Spectrometers of charged nuclei ndash often semiconductor silicon detectors
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
Application at material research - scattering channeling ion reaction
Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV
Usage ions for modification and studies of structure of surface layers of solid materials
Different types of silicon semiconductor detectors of charged particles
Usage of ion accelerators for relatively low energies in the range from keV up to MeV
Spectrometers of charged nuclei ndash often semiconductor silicon detectors
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei
RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample
ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight
ERDA
incident ion
scattered ion
detector
RBS
Elastic scattering ions
incident ion
reflected ion
detector
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-
Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)
PIXE ndash (Particle Induced Gamma ray Emission)
Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices
Sprockets produced by ion litography method at photoresistive material
Ion implantation ndash modification of surface material layers
Material modification and working
AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating
Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy
see gamma spectroscopy
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
-