282 Abstracts 109--118

30 109. A Method of Applying Films by Deposition in Vacua and Electrical Impedances when Made by the Method. United States. This patent describes a method of applying films of predetermined thickness with precise and continuous control. The method is applicable to the deposition of a number of materials including metals, their oxides and suitable semi- conducting or intermetallic substances. DePOsition of vitreous materials, such as silica for the purpose of protection or electrical insulation, is also possible. A typical vacuum chamber is described, pumped by conventional methods. Inside the vacuum chamber are situated the vapour sources, the work- holder which carries the substrata on which the vapour is to be deposited, and a light source and photo-electric cell for deter- mining the optical transmittance of films deposited on a trans- parent monitor plate. The workholder consists of a circular plate with a series of holes around the periphery. These holes are designed to hold the work and the t ransparent monitor plate. The sources are situated underneath the workholder and as the plate rotates, each hole is brought into line with one of the sources or the photocell device. Thus with each revolution of the workholder, a film is progressively deposited on the work. Similarly the optical transmittance of the moni tor plate is mea- sured by the photocell once during each revolution. The repeated exposures are continued until the film on the trans- parent support reaches a given value of optical transmittance. This also gives an accurate indication of the electrical resistance of the film if empirical constants which establish the relationship between electrical resistance and optical transmittance are first obtained for each particular material. This method of monitoring is considered accurate in view of the fact tha t the process usually employs three to four hundred treatment cycles. The apparatus has been designed particularly for making resis- tance elements protected by a vitreous evaporated layer or for making capacitors by the deposition of conducting films on both sides of a dielectric plate, made for example from barium titanate.

Brit. Pat. 801 030, 3 Sept. 1958.

3O 110. Substrate Damage in Film Thickness Measurement by Beam Iuterferometry. Canada. Letter by G. D. Scott, Nature, 184, Suppl. No. 6, p. 354-355, 1 Aug. 1959.

30 : 16 The Interaction of Krypton with Metals. An Appraisal of Several Interaction Theories. See Abstract No. 38.

30 : 16 : 52 Surface Reactions on Evaporated Palladium Films. See Abstract No. 45.

3 0 : 1 6 Theory of Permeation Through Metal Coated Polymer Films. See Abstract No. 52.

30 : 17 Evaporation into a Boundary Layer. See Abstract No. 68.

3 0 : 1 9 Preparation of Phase Diffraction Gratings by Vacuum Evaporation. See Abstract No. 85.

3 0 : 1 9 Method for Obtaining Uniform Evaporated Layers. See Abstract No. 86.

32. N u c l e o n i c s

32 114. New Electrostatic Accelerator. Considering the proposition that the maximum usable voltage of most electrostatic accelerators is limited by the breakdown and electrical discharges in the accelerating tube, the authors have designed and constructed a new machine operating at potential gradients of 1400 Kv/foot. It was assumed by the authors that the breakdown of the tube was associated with films of organic contaminants on the tube surfaces. Conse- quently, the entire accelerating tube and vacuum system were constructed of bakeable materials. The pumps used are evapor- ion type and the system reaches pressures of a few times 10 -8 mm Hg. All gaskets, valves, gauges, and other vacuum accessories are designed to have low vapor pressure, even at bakeout temperature, c .L .C.

Irving Michael, et al., Rev. Sci. Instrum., 30, 855.

I U . Interferometrie Studies of Synthetic Diamonds. United Kingdom. S. Tolansky and I. Sunagawa, Nature, 185, No. 4708, 203-204, 23 Jan. 1960.

30 112. Investigation of Thin Films Produced by Evaporating Indium Antimonide in Vacuum. G. A. Kurov and Z. G. Pinsker, Soy. Phys. Tech. Phys., 3 : 10 (Transl.), 1958.

30 113. Control of the Thickness of Evaporated Layers During Evaporation. G. Papp, Rev. Sci. Instrum., 30, 911.

30 : 15 : 17 Evaporation into a Boundary Layer. II. Dissociation in Evaporation. See Abstract No. 10.

32 115. 22 M e V Electron Linear Accelerator. N. A. Austin and S. C. Fultz, Rev. Sci. lnstrum., 30, 284.

32 116. Duo Plasmatron Ion Source for Use in Accelerators. C. D. Monk, et aL, Rev. Sci. Instrum., 30, 694.

117. Zero Gradient Synchrotron at the Argonne Laboratory. Engineer, 208, 5413, 492, Oct. 1959.

32 National

3 2 : 1 6 Oxygen Sorption and Electrical Conductivity of Copper Oxide Films. See Abstract No. 53.

30 : 16 : 33 Secondary Positive Ion Emission from Metal Surfaces. See Abstract No. 12.

3 0 : 1 6 The Adsorption of Some Gases on Evaporated Metal Films and on Oxidized Films of Nickel. See Abstract No. 32.

33. G e n e r a l P h y s i c s and E lec tron ic s

33 118. Recombination 9f Atoms at Surfaces. J. C. Greaves and J. W. Linnett, Trans. Faraday Soc., Part 4, 55, 1338-1345, Aug. 1959. Part 5, 55, 1346-1354, Aug. 1959.